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Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide

Graphene as a material for optoelectronic design applications has been significantly re-stricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhan...

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Main Authors: Witjaksono, G., Junaid, M., Khir, M.H., Ullah, Z., Tansu, N., Saheed, M.S.B.M., Siddiqui, M.A., Ba-Hashwan, S.S., Algamili, A.S., Magsi, S.A., Aslam, M.Z., Nawaz, R.
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Published: MDPI 2021
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85117953614&doi=10.3390%2fmolecules26216424&partnerID=40&md5=8657ff091222bb887bfe9263d8a7acc4
http://eprints.utp.edu.my/32385/
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spelling my.utp.eprints.323852022-03-29T01:25:55Z Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide Witjaksono, G. Junaid, M. Khir, M.H. Ullah, Z. Tansu, N. Saheed, M.S.B.M. Siddiqui, M.A. Ba-Hashwan, S.S. Algamili, A.S. Magsi, S.A. Aslam, M.Z. Nawaz, R. Graphene as a material for optoelectronic design applications has been significantly re-stricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect mea-surement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale. © 2021 by the authors. Licensee MDPI, Basel, Switzerland. MDPI 2021 Article NonPeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-85117953614&doi=10.3390%2fmolecules26216424&partnerID=40&md5=8657ff091222bb887bfe9263d8a7acc4 Witjaksono, G. and Junaid, M. and Khir, M.H. and Ullah, Z. and Tansu, N. and Saheed, M.S.B.M. and Siddiqui, M.A. and Ba-Hashwan, S.S. and Algamili, A.S. and Magsi, S.A. and Aslam, M.Z. and Nawaz, R. (2021) Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide. Molecules, 26 (21). http://eprints.utp.edu.my/32385/
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Institutional Repository
url_provider http://eprints.utp.edu.my/
description Graphene as a material for optoelectronic design applications has been significantly re-stricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect mea-surement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale. © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
format Article
author Witjaksono, G.
Junaid, M.
Khir, M.H.
Ullah, Z.
Tansu, N.
Saheed, M.S.B.M.
Siddiqui, M.A.
Ba-Hashwan, S.S.
Algamili, A.S.
Magsi, S.A.
Aslam, M.Z.
Nawaz, R.
spellingShingle Witjaksono, G.
Junaid, M.
Khir, M.H.
Ullah, Z.
Tansu, N.
Saheed, M.S.B.M.
Siddiqui, M.A.
Ba-Hashwan, S.S.
Algamili, A.S.
Magsi, S.A.
Aslam, M.Z.
Nawaz, R.
Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide
author_facet Witjaksono, G.
Junaid, M.
Khir, M.H.
Ullah, Z.
Tansu, N.
Saheed, M.S.B.M.
Siddiqui, M.A.
Ba-Hashwan, S.S.
Algamili, A.S.
Magsi, S.A.
Aslam, M.Z.
Nawaz, R.
author_sort Witjaksono, G.
title Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide
title_short Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide
title_full Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide
title_fullStr Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide
title_full_unstemmed Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide
title_sort effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide
publisher MDPI
publishDate 2021
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85117953614&doi=10.3390%2fmolecules26216424&partnerID=40&md5=8657ff091222bb887bfe9263d8a7acc4
http://eprints.utp.edu.my/32385/
_version_ 1738657379818405888
score 13.211869

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