Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide
Graphene as a material for optoelectronic design applications has been significantly re-stricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhan...
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| 主要な著者: | , , , , , , , , , , , |
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| フォーマット: | 論文 |
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MDPI
2021
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| オンライン･アクセス: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85117953614&doi=10.3390%2fmolecules26216424&partnerID=40&md5=8657ff091222bb887bfe9263d8a7acc4 http://eprints.utp.edu.my/32385/ |
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| 要約: | Graphene as a material for optoelectronic design applications has been significantly re-stricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect mea-surement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale. © 2021 by the authors. Licensee MDPI, Basel, Switzerland. |
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