Contact Resistance of Metal-CNT Contacts in Field Effect Based Sensors

Contact engineering is a very crucial area of sensor development. This is especially true when dealing with devices at the very small micro and nano scale. Field effect-based sensors implementing nanodevices as channel material are amenable to extreme device miniaturization. Semiconducting carbon na...

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Main Authors: Alabsi, S.S., Khir, M.H.M., Saheed, M.S.M., Dennis, J.O., Ahmed, A.Y.
Format: Conference or Workshop Item
Published: Institute of Electrical and Electronics Engineers Inc. 2021
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124136525&doi=10.1109%2fICIAS49414.2021.9642660&partnerID=40&md5=1da73ec3b52d5780568b77b18408130b
http://eprints.utp.edu.my/29212/
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spelling my.utp.eprints.292122022-03-25T01:11:54Z Contact Resistance of Metal-CNT Contacts in Field Effect Based Sensors Alabsi, S.S. Khir, M.H.M. Saheed, M.S.M. Dennis, J.O. Ahmed, A.Y. Contact engineering is a very crucial area of sensor development. This is especially true when dealing with devices at the very small micro and nano scale. Field effect-based sensors implementing nanodevices as channel material are amenable to extreme device miniaturization. Semiconducting carbon nanotubes (sc-CNTs) are exceptionally promising for FET-channel integration to replace bulky silicon technology beyond the dimensions of the short channel effects for their ID ultrathin structure, and superior mechanical and electronic features. However, the inhomogeneous contact between metal electrodes and the sc-CNT is amounting at relatively high contact resistance. In this paper, the effect of variation of certain physical parameters on electronic features was mathematically investigated using Y-Function Method (YFM) equations. Two physical parameters; CNT diameter and contact length, were varied in a range of set values. Results show that lower band gap energy and threshold voltage are obtained with larger CNT diameters, while increasing contact length have a significant reduction effect on contact resistance. In addition, the effect of contact resistance on sensor's performance in terms of drain current and the transconductance was also demonstrated. © 2021 IEEE. Institute of Electrical and Electronics Engineers Inc. 2021 Conference or Workshop Item NonPeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124136525&doi=10.1109%2fICIAS49414.2021.9642660&partnerID=40&md5=1da73ec3b52d5780568b77b18408130b Alabsi, S.S. and Khir, M.H.M. and Saheed, M.S.M. and Dennis, J.O. and Ahmed, A.Y. (2021) Contact Resistance of Metal-CNT Contacts in Field Effect Based Sensors. In: UNSPECIFIED. http://eprints.utp.edu.my/29212/
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Institutional Repository
url_provider http://eprints.utp.edu.my/
description Contact engineering is a very crucial area of sensor development. This is especially true when dealing with devices at the very small micro and nano scale. Field effect-based sensors implementing nanodevices as channel material are amenable to extreme device miniaturization. Semiconducting carbon nanotubes (sc-CNTs) are exceptionally promising for FET-channel integration to replace bulky silicon technology beyond the dimensions of the short channel effects for their ID ultrathin structure, and superior mechanical and electronic features. However, the inhomogeneous contact between metal electrodes and the sc-CNT is amounting at relatively high contact resistance. In this paper, the effect of variation of certain physical parameters on electronic features was mathematically investigated using Y-Function Method (YFM) equations. Two physical parameters; CNT diameter and contact length, were varied in a range of set values. Results show that lower band gap energy and threshold voltage are obtained with larger CNT diameters, while increasing contact length have a significant reduction effect on contact resistance. In addition, the effect of contact resistance on sensor's performance in terms of drain current and the transconductance was also demonstrated. © 2021 IEEE.
format Conference or Workshop Item
author Alabsi, S.S.
Khir, M.H.M.
Saheed, M.S.M.
Dennis, J.O.
Ahmed, A.Y.
spellingShingle Alabsi, S.S.
Khir, M.H.M.
Saheed, M.S.M.
Dennis, J.O.
Ahmed, A.Y.
Contact Resistance of Metal-CNT Contacts in Field Effect Based Sensors
author_facet Alabsi, S.S.
Khir, M.H.M.
Saheed, M.S.M.
Dennis, J.O.
Ahmed, A.Y.
author_sort Alabsi, S.S.
title Contact Resistance of Metal-CNT Contacts in Field Effect Based Sensors
title_short Contact Resistance of Metal-CNT Contacts in Field Effect Based Sensors
title_full Contact Resistance of Metal-CNT Contacts in Field Effect Based Sensors
title_fullStr Contact Resistance of Metal-CNT Contacts in Field Effect Based Sensors
title_full_unstemmed Contact Resistance of Metal-CNT Contacts in Field Effect Based Sensors
title_sort contact resistance of metal-cnt contacts in field effect based sensors
publisher Institute of Electrical and Electronics Engineers Inc.
publishDate 2021
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124136525&doi=10.1109%2fICIAS49414.2021.9642660&partnerID=40&md5=1da73ec3b52d5780568b77b18408130b
http://eprints.utp.edu.my/29212/
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score 13.211869