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Electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with sio2 and high-k dielectrics

In this work, the electrical characteristics of n-type cylindrical gate all around (GAA) nanowire junctionless transistors (NWJLT) of different gate oxides are investigated and analyzed. Silicon dioxide (SiO2) and two high-k dielectrics which are silicon nitride (Si3N4) and hafnium dioxide (HfO2) we...

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Main Authors: Alias, N. E., Sule, M. A., Tan, M. L. P., Hamzah, A., Saidu, K. A., Mohammed, S., Aminu, T. K., Shehu, A.
Format: Conference or Workshop Item
Language:English
Published: 2020
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/93901/1/NurulEzailaAlias2020_ElectricalCharacterizationofNTypeCylindricalGate.pdf
http://eprints.utm.my/id/eprint/93901/
https://doi.org/10.1109/ICSE49846.2020.9166886
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spelling my.utm.939012022-02-28T13:12:25Z http://eprints.utm.my/id/eprint/93901/ Electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with sio2 and high-k dielectrics Alias, N. E. Sule, M. A. Tan, M. L. P. Hamzah, A. Saidu, K. A. Mohammed, S. Aminu, T. K. Shehu, A. TK Electrical engineering. Electronics Nuclear engineering In this work, the electrical characteristics of n-type cylindrical gate all around (GAA) nanowire junctionless transistors (NWJLT) of different gate oxides are investigated and analyzed. Silicon dioxide (SiO2) and two high-k dielectrics which are silicon nitride (Si3N4) and hafnium dioxide (HfO2) were used in this study. GAANWJLT of different gate lengths (LG) and nanowire diameter (dNW) were simulated, compared and analyzed to obtain the most optimum device. SDE and Sdevice tools of Sentaurus TCAD were used to simulate and extract the electrical properties of the proposed devices. It was found that GAANWJLT with high-k dielectrics significantly exhibits better electrical properties than with SiO2 due to increase in internal fringe capacitance of the gate dielectric layer. SCEs were considerably improved as the gate-to-channel capacitance reduced. It was found that, for LG of 7 nm and dNW of 6 nm GAANWJLT, device with HfO2 exhibits better electrical properties with more than 2-fold elevated in ION/IOFF ratio and about 15% improvement in SS than the conventional device with SiO2. It proves that GAANWJLT with HfO2 exhibits the most optimum electrical characteristics among the three devices, hence the best alternative to improve SCEs as well as to increase the switching speed of the transistor devices. 2020 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/93901/1/NurulEzailaAlias2020_ElectricalCharacterizationofNTypeCylindricalGate.pdf Alias, N. E. and Sule, M. A. and Tan, M. L. P. and Hamzah, A. and Saidu, K. A. and Mohammed, S. and Aminu, T. K. and Shehu, A. (2020) Electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with sio2 and high-k dielectrics. In: 14th IEEE International Conference on Semiconductor Electronics, ICSE 2020, 28 July - 29 July 2020, Kuala Lumpur, Malaysia. https://doi.org/10.1109/ICSE49846.2020.9166886 DOI: 10.1109/ICSE49846.2020.9166886
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Alias, N. E.
Sule, M. A.
Tan, M. L. P.
Hamzah, A.
Saidu, K. A.
Mohammed, S.
Aminu, T. K.
Shehu, A.
Electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with sio2 and high-k dielectrics
description In this work, the electrical characteristics of n-type cylindrical gate all around (GAA) nanowire junctionless transistors (NWJLT) of different gate oxides are investigated and analyzed. Silicon dioxide (SiO2) and two high-k dielectrics which are silicon nitride (Si3N4) and hafnium dioxide (HfO2) were used in this study. GAANWJLT of different gate lengths (LG) and nanowire diameter (dNW) were simulated, compared and analyzed to obtain the most optimum device. SDE and Sdevice tools of Sentaurus TCAD were used to simulate and extract the electrical properties of the proposed devices. It was found that GAANWJLT with high-k dielectrics significantly exhibits better electrical properties than with SiO2 due to increase in internal fringe capacitance of the gate dielectric layer. SCEs were considerably improved as the gate-to-channel capacitance reduced. It was found that, for LG of 7 nm and dNW of 6 nm GAANWJLT, device with HfO2 exhibits better electrical properties with more than 2-fold elevated in ION/IOFF ratio and about 15% improvement in SS than the conventional device with SiO2. It proves that GAANWJLT with HfO2 exhibits the most optimum electrical characteristics among the three devices, hence the best alternative to improve SCEs as well as to increase the switching speed of the transistor devices.
format Conference or Workshop Item
author Alias, N. E.
Sule, M. A.
Tan, M. L. P.
Hamzah, A.
Saidu, K. A.
Mohammed, S.
Aminu, T. K.
Shehu, A.
author_facet Alias, N. E.
Sule, M. A.
Tan, M. L. P.
Hamzah, A.
Saidu, K. A.
Mohammed, S.
Aminu, T. K.
Shehu, A.
author_sort Alias, N. E.
title Electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with sio2 and high-k dielectrics
title_short Electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with sio2 and high-k dielectrics
title_full Electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with sio2 and high-k dielectrics
title_fullStr Electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with sio2 and high-k dielectrics
title_full_unstemmed Electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with sio2 and high-k dielectrics
title_sort electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with sio2 and high-k dielectrics
publishDate 2020
url http://eprints.utm.my/id/eprint/93901/1/NurulEzailaAlias2020_ElectricalCharacterizationofNTypeCylindricalGate.pdf
http://eprints.utm.my/id/eprint/93901/
https://doi.org/10.1109/ICSE49846.2020.9166886
_version_ 1726791451399946240
score 13.211869

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