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Electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with sio2 and high-k dielectrics

In this work, the electrical characteristics of n-type cylindrical gate all around (GAA) nanowire junctionless transistors (NWJLT) of different gate oxides are investigated and analyzed. Silicon dioxide (SiO2) and two high-k dielectrics which are silicon nitride (Si3N4) and hafnium dioxide (HfO2) we...

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Bibliographic Details
Main Authors: Alias, N. E., Sule, M. A., Tan, M. L. P., Hamzah, A., Saidu, K. A., Mohammed, S., Aminu, T. K., Shehu, A.
Format: Conference or Workshop Item
Language:English
Published: 2020
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/93901/1/NurulEzailaAlias2020_ElectricalCharacterizationofNTypeCylindricalGate.pdf
http://eprints.utm.my/id/eprint/93901/
https://doi.org/10.1109/ICSE49846.2020.9166886
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http://eprints.utm.my/id/eprint/93901/1/NurulEzailaAlias2020_ElectricalCharacterizationofNTypeCylindricalGate.pdf
http://eprints.utm.my/id/eprint/93901/
https://doi.org/10.1109/ICSE49846.2020.9166886

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