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Photophysical performance of Nd-YAG annealed Pt/n-PSi /Pt photovoltaic photodetectors at different laser energy

This study investigates the electrical and photoresponse properties of Nd-YAG annealed Pt/n-PSi/Pt photodetectors. A porous silicon (PSi) layer was deposited on a single crystalline n-type Si via photoelectrochemical etching in aqueous hydrofluoric acid at 45 mA cm−2 for 30 min. Annealing of the n-P...

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Main Authors: Thahe, Asad A., Shaheen, Basamat S., Uday, M. B., Abdullah, Mundzir, Qaeed, M. A., Alqaraghuli, Hasan, Allam, Nageh K.
Format: Article
Published: Springer Science+Business Media, LLC, part of Springer Nature 2020
Subjects:
QC Physics
Online Access:http://eprints.utm.my/id/eprint/93677/
http://dx.doi.org/10.1007/s11082-020-02582-4
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spelling my.utm.936772021-12-31T08:48:11Z http://eprints.utm.my/id/eprint/93677/ Photophysical performance of Nd-YAG annealed Pt/n-PSi /Pt photovoltaic photodetectors at different laser energy Thahe, Asad A. Shaheen, Basamat S. Uday, M. B. Abdullah, Mundzir Qaeed, M. A. Alqaraghuli, Hasan Allam, Nageh K. QC Physics This study investigates the electrical and photoresponse properties of Nd-YAG annealed Pt/n-PSi/Pt photodetectors. A porous silicon (PSi) layer was deposited on a single crystalline n-type Si via photoelectrochemical etching in aqueous hydrofluoric acid at 45 mA cm−2 for 30 min. Annealing of the n-PSi layer was conducted using a Q-switching Nd:YAG laser at different fluence laser energies (20, 30, 40, 60 mJ cm−2) with a pulse duration of 10 ns. The effect of Nd:YAG laser irradiation on the morphological and structural properties of the deposited n-PSi layer was determined. The n-PSi sample synthesized at 40 mJ cm−2 showed the maximum average discrepancy. The photodetectors fabricated using such materials showed very high sensitivity (1527.9) and low dark current (2.58 × 10−4 A) with an internal photoconductive gain of 16.27, photoresponse of 3.1 A W−1, response time of 0.29 s, and recovery time of 0.45 s. These exceptional properties of the fabricated photodetectors indicate that the laser annealing approach is a viable tool for the synthesis of n-PSi that is suitable for various applications. Springer Science+Business Media, LLC, part of Springer Nature 2020-11-01 Article PeerReviewed Thahe, Asad A. and Shaheen, Basamat S. and Uday, M. B. and Abdullah, Mundzir and Qaeed, M. A. and Alqaraghuli, Hasan and Allam, Nageh K. (2020) Photophysical performance of Nd-YAG annealed Pt/n-PSi /Pt photovoltaic photodetectors at different laser energy. Optical and Quantum Electronics, 52 (11). ISSN 0306-8919 http://dx.doi.org/10.1007/s11082-020-02582-4 DOI:10.1007/s11082-020-02582-4
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic QC Physics
spellingShingle QC Physics
Thahe, Asad A.
Shaheen, Basamat S.
Uday, M. B.
Abdullah, Mundzir
Qaeed, M. A.
Alqaraghuli, Hasan
Allam, Nageh K.
Photophysical performance of Nd-YAG annealed Pt/n-PSi /Pt photovoltaic photodetectors at different laser energy
description This study investigates the electrical and photoresponse properties of Nd-YAG annealed Pt/n-PSi/Pt photodetectors. A porous silicon (PSi) layer was deposited on a single crystalline n-type Si via photoelectrochemical etching in aqueous hydrofluoric acid at 45 mA cm−2 for 30 min. Annealing of the n-PSi layer was conducted using a Q-switching Nd:YAG laser at different fluence laser energies (20, 30, 40, 60 mJ cm−2) with a pulse duration of 10 ns. The effect of Nd:YAG laser irradiation on the morphological and structural properties of the deposited n-PSi layer was determined. The n-PSi sample synthesized at 40 mJ cm−2 showed the maximum average discrepancy. The photodetectors fabricated using such materials showed very high sensitivity (1527.9) and low dark current (2.58 × 10−4 A) with an internal photoconductive gain of 16.27, photoresponse of 3.1 A W−1, response time of 0.29 s, and recovery time of 0.45 s. These exceptional properties of the fabricated photodetectors indicate that the laser annealing approach is a viable tool for the synthesis of n-PSi that is suitable for various applications.
format Article
author Thahe, Asad A.
Shaheen, Basamat S.
Uday, M. B.
Abdullah, Mundzir
Qaeed, M. A.
Alqaraghuli, Hasan
Allam, Nageh K.
author_facet Thahe, Asad A.
Shaheen, Basamat S.
Uday, M. B.
Abdullah, Mundzir
Qaeed, M. A.
Alqaraghuli, Hasan
Allam, Nageh K.
author_sort Thahe, Asad A.
title Photophysical performance of Nd-YAG annealed Pt/n-PSi /Pt photovoltaic photodetectors at different laser energy
title_short Photophysical performance of Nd-YAG annealed Pt/n-PSi /Pt photovoltaic photodetectors at different laser energy
title_full Photophysical performance of Nd-YAG annealed Pt/n-PSi /Pt photovoltaic photodetectors at different laser energy
title_fullStr Photophysical performance of Nd-YAG annealed Pt/n-PSi /Pt photovoltaic photodetectors at different laser energy
title_full_unstemmed Photophysical performance of Nd-YAG annealed Pt/n-PSi /Pt photovoltaic photodetectors at different laser energy
title_sort photophysical performance of nd-yag annealed pt/n-psi /pt photovoltaic photodetectors at different laser energy
publisher Springer Science+Business Media, LLC, part of Springer Nature
publishDate 2020
url http://eprints.utm.my/id/eprint/93677/
http://dx.doi.org/10.1007/s11082-020-02582-4
_version_ 1720980109045792768
score 13.211869

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