Photophysical performance of Nd-YAG annealed Pt/n-PSi /Pt photovoltaic photodetectors at different laser energy
This study investigates the electrical and photoresponse properties of Nd-YAG annealed Pt/n-PSi/Pt photodetectors. A porous silicon (PSi) layer was deposited on a single crystalline n-type Si via photoelectrochemical etching in aqueous hydrofluoric acid at 45 mA cm−2 for 30 min. Annealing of the n-P...
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| Main Authors: | , , , , , , |
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| Format: | Article |
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Springer Science+Business Media, LLC, part of Springer Nature
2020
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/93677/ http://dx.doi.org/10.1007/s11082-020-02582-4 |
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| Summary: | This study investigates the electrical and photoresponse properties of Nd-YAG annealed Pt/n-PSi/Pt photodetectors. A porous silicon (PSi) layer was deposited on a single crystalline n-type Si via photoelectrochemical etching in aqueous hydrofluoric acid at 45 mA cm−2 for 30 min. Annealing of the n-PSi layer was conducted using a Q-switching Nd:YAG laser at different fluence laser energies (20, 30, 40, 60 mJ cm−2) with a pulse duration of 10 ns. The effect of Nd:YAG laser irradiation on the morphological and structural properties of the deposited n-PSi layer was determined. The n-PSi sample synthesized at 40 mJ cm−2 showed the maximum average discrepancy. The photodetectors fabricated using such materials showed very high sensitivity (1527.9) and low dark current (2.58 × 10−4 A) with an internal photoconductive gain of 16.27, photoresponse of 3.1 A W−1, response time of 0.29 s, and recovery time of 0.45 s. These exceptional properties of the fabricated photodetectors indicate that the laser annealing approach is a viable tool for the synthesis of n-PSi that is suitable for various applications. |
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