Effect of etching as pre-treatment for electroless copper plating on silicon wafer
Metallic coatings, such as copper films can be easily deposited on semiconductor materials like silicon wafer without prior surface pre-treatment using the electroless process. However, the adhesion of the copper film can be very weak and can easily peels off. In this study, the effect of etching in...
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2017
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my.utm.766862018-04-30T13:50:18Z http://eprints.utm.my/id/eprint/76686/ Effect of etching as pre-treatment for electroless copper plating on silicon wafer Shahidin, S. A. M. Fadil, N. A. Yusop, M. Z. Tamin, M. N. Osman, S. A. TJ Mechanical engineering and machinery Metallic coatings, such as copper films can be easily deposited on semiconductor materials like silicon wafer without prior surface pre-treatment using the electroless process. However, the adhesion of the copper film can be very weak and can easily peels off. In this study, the effect of etching in hydrofluoric acid solution as a surface pre-treatment prior to electroless plating on silicon wafer was studied. The etching time in hydrofluoric acid was varied at 1, 3 and 5 minutes in order to investigate the adhesion behaviour of the coating layer. The surface morphology of the electroless plated samples was observed using a field emission scanning electron microscope (FESEM) and the coating thickness was measured using cross sectional analysis. The results showed that longer etching time (5 minutes) produced thicker Cu deposits (8.5µm) than 1 minute etching time (5µm). In addition, by increasing the etching time, the mechanical bonding between the copper film and the substrate is improved. Penerbit UTM Press 2017 Article PeerReviewed Shahidin, S. A. M. and Fadil, N. A. and Yusop, M. Z. and Tamin, M. N. and Osman, S. A. (2017) Effect of etching as pre-treatment for electroless copper plating on silicon wafer. Jurnal Teknologi, 79 (7). pp. 61-69. ISSN 0127-9696 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85032275598&doi=10.11113%2fjt.v79.10640&partnerID=40&md5=b5b98ce65503279f0aa063e6c1289236 DOI:10.11113/jt.v79.10640 |
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TJ Mechanical engineering and machinery Shahidin, S. A. M. Fadil, N. A. Yusop, M. Z. Tamin, M. N. Osman, S. A. Effect of etching as pre-treatment for electroless copper plating on silicon wafer |
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Metallic coatings, such as copper films can be easily deposited on semiconductor materials like silicon wafer without prior surface pre-treatment using the electroless process. However, the adhesion of the copper film can be very weak and can easily peels off. In this study, the effect of etching in hydrofluoric acid solution as a surface pre-treatment prior to electroless plating on silicon wafer was studied. The etching time in hydrofluoric acid was varied at 1, 3 and 5 minutes in order to investigate the adhesion behaviour of the coating layer. The surface morphology of the electroless plated samples was observed using a field emission scanning electron microscope (FESEM) and the coating thickness was measured using cross sectional analysis. The results showed that longer etching time (5 minutes) produced thicker Cu deposits (8.5µm) than 1 minute etching time (5µm). In addition, by increasing the etching time, the mechanical bonding between the copper film and the substrate is improved. |
| format |
Article |
| author |
Shahidin, S. A. M. Fadil, N. A. Yusop, M. Z. Tamin, M. N. Osman, S. A. |
| author_facet |
Shahidin, S. A. M. Fadil, N. A. Yusop, M. Z. Tamin, M. N. Osman, S. A. |
| author_sort |
Shahidin, S. A. M. |
| title |
Effect of etching as pre-treatment for electroless copper plating on silicon wafer |
| title_short |
Effect of etching as pre-treatment for electroless copper plating on silicon wafer |
| title_full |
Effect of etching as pre-treatment for electroless copper plating on silicon wafer |
| title_fullStr |
Effect of etching as pre-treatment for electroless copper plating on silicon wafer |
| title_full_unstemmed |
Effect of etching as pre-treatment for electroless copper plating on silicon wafer |
| title_sort |
effect of etching as pre-treatment for electroless copper plating on silicon wafer |
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Penerbit UTM Press |
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2017 |
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http://eprints.utm.my/id/eprint/76686/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-85032275598&doi=10.11113%2fjt.v79.10640&partnerID=40&md5=b5b98ce65503279f0aa063e6c1289236 |
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1643657381710659584 |
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13.211869 |