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Interdigital-gated HEMT structure for high frequency devices

Interdigital-gated AlGaAs/GaAs high electron mobility transistor (HEMT) structure was used to investigate the interaction between the drifting carrier plasma waves and electromagnetic (EM) waves. It was shown theoretically that the interaction in the range from microwave to terahertz (THz) at room t...

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Main Authors: Hashim, Abdul Manaf, Kasai, Seiya, Hashizume, Tamotsu, Hasegawa, Hideki
Format: Conference or Workshop Item
Language:English
Published: 2006
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/7633/1/Hashim_Abdul_Manaf_2006_Interdigital-Gated_HEMT_Structure__High.pdf
http://eprints.utm.my/id/eprint/7633/
http://dx.doi.org/10.1109/RFM.2006.331082
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spelling my.utm.76332017-08-30T01:41:57Z http://eprints.utm.my/id/eprint/7633/ Interdigital-gated HEMT structure for high frequency devices Hashim, Abdul Manaf Kasai, Seiya Hashizume, Tamotsu Hasegawa, Hideki TK Electrical engineering. Electronics Nuclear engineering Interdigital-gated AlGaAs/GaAs high electron mobility transistor (HEMT) structure was used to investigate the interaction between the drifting carrier plasma waves and electromagnetic (EM) waves. It was shown theoretically that the interaction in the range from microwave to terahertz (THz) at room temperature should produce negative conductance characteristics when the carrier drift velocity slightly exceeds the phase velocity of EM waves. S-parameter reflection measurements were carried out at room temperature for a frequency range from 1 to 20 GHz and a drastic change in conductance was observed at 5GHz and 10GHz with the increase of drain-source voltage. Large conductance change over 1000 mS/mm was obtained and it showed a peak at a certain frequency. The peak position could be controlled by changing the pitch size of the interdigital gates. These characteristics can be used for high frequency applications such as high-speed switching devices although a feature size of our interdigital-gated HEMT device is much larger than conventional HEMT device. 2006 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/7633/1/Hashim_Abdul_Manaf_2006_Interdigital-Gated_HEMT_Structure__High.pdf Hashim, Abdul Manaf and Kasai, Seiya and Hashizume, Tamotsu and Hasegawa, Hideki (2006) Interdigital-gated HEMT structure for high frequency devices. In: 2006 International RF and Microwave Conference, (RFM) Proceedings, 12 - 14 Sept 2006, Putrajaya, Malaysia. http://dx.doi.org/10.1109/RFM.2006.331082
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Hashim, Abdul Manaf
Kasai, Seiya
Hashizume, Tamotsu
Hasegawa, Hideki
Interdigital-gated HEMT structure for high frequency devices
description Interdigital-gated AlGaAs/GaAs high electron mobility transistor (HEMT) structure was used to investigate the interaction between the drifting carrier plasma waves and electromagnetic (EM) waves. It was shown theoretically that the interaction in the range from microwave to terahertz (THz) at room temperature should produce negative conductance characteristics when the carrier drift velocity slightly exceeds the phase velocity of EM waves. S-parameter reflection measurements were carried out at room temperature for a frequency range from 1 to 20 GHz and a drastic change in conductance was observed at 5GHz and 10GHz with the increase of drain-source voltage. Large conductance change over 1000 mS/mm was obtained and it showed a peak at a certain frequency. The peak position could be controlled by changing the pitch size of the interdigital gates. These characteristics can be used for high frequency applications such as high-speed switching devices although a feature size of our interdigital-gated HEMT device is much larger than conventional HEMT device.
format Conference or Workshop Item
author Hashim, Abdul Manaf
Kasai, Seiya
Hashizume, Tamotsu
Hasegawa, Hideki
author_facet Hashim, Abdul Manaf
Kasai, Seiya
Hashizume, Tamotsu
Hasegawa, Hideki
author_sort Hashim, Abdul Manaf
title Interdigital-gated HEMT structure for high frequency devices
title_short Interdigital-gated HEMT structure for high frequency devices
title_full Interdigital-gated HEMT structure for high frequency devices
title_fullStr Interdigital-gated HEMT structure for high frequency devices
title_full_unstemmed Interdigital-gated HEMT structure for high frequency devices
title_sort interdigital-gated hemt structure for high frequency devices
publishDate 2006
url http://eprints.utm.my/id/eprint/7633/1/Hashim_Abdul_Manaf_2006_Interdigital-Gated_HEMT_Structure__High.pdf
http://eprints.utm.my/id/eprint/7633/
http://dx.doi.org/10.1109/RFM.2006.331082
_version_ 1643644816745037824
score 13.211869

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