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Interdigital-gated HEMT structure for high frequency devices

Interdigital-gated AlGaAs/GaAs high electron mobility transistor (HEMT) structure was used to investigate the interaction between the drifting carrier plasma waves and electromagnetic (EM) waves. It was shown theoretically that the interaction in the range from microwave to terahertz (THz) at room t...

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Bibliographic Details
Main Authors: Hashim, Abdul Manaf, Kasai, Seiya, Hashizume, Tamotsu, Hasegawa, Hideki
Format: Conference or Workshop Item
Language:English
Published: 2006
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/7633/1/Hashim_Abdul_Manaf_2006_Interdigital-Gated_HEMT_Structure__High.pdf
http://eprints.utm.my/id/eprint/7633/
http://dx.doi.org/10.1109/RFM.2006.331082
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http://eprints.utm.my/id/eprint/7633/1/Hashim_Abdul_Manaf_2006_Interdigital-Gated_HEMT_Structure__High.pdf
http://eprints.utm.my/id/eprint/7633/
http://dx.doi.org/10.1109/RFM.2006.331082

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