Cover Image

Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers

Copper antimony sulfide (Cu3SbS3) with a p-type conductivity and optical band gaps in the range of 1.38 to 1.84 eV is considered to be a promising solar harvesting material with non-toxic and economical elements. In this study, we reported the fabrication of Cu3SbS3 thin films using successive therm...

Full description

Saved in:
Bibliographic Details
Main Authors: Hussain, A., Ahmed, R., Ali, N., Shaari, A., Luo, J. T., Fu, Y. Q.
Format: Article
Published: Elsevier B.V. 2017
Subjects:
QC Physics
Online Access:http://eprints.utm.my/id/eprint/75643/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85017571801&doi=10.1016%2fj.surfcoat.2017.04.021&partnerID=40&md5=42feed032ca384b67012cf7f30b83200
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.utm.75643
record_format eprints
spelling my.utm.756432018-04-27T01:39:28Z http://eprints.utm.my/id/eprint/75643/ Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers Hussain, A. Ahmed, R. Ali, N. Shaari, A. Luo, J. T. Fu, Y. Q. QC Physics Copper antimony sulfide (Cu3SbS3) with a p-type conductivity and optical band gaps in the range of 1.38 to 1.84 eV is considered to be a promising solar harvesting material with non-toxic and economical elements. In this study, we reported the fabrication of Cu3SbS3 thin films using successive thermal evaporation of Cu2S and Sb2S3 layers followed by annealing in an argon atmosphere at a temperature range of 300–375 °C. The structural and optical properties of the as-deposited and annealed films were investigated. The annealed films notably show the crystalline phase of Cu3SbS3, identified from the X-ray diffraction analysis and endorsed by the Raman analysis as well, whereas the chemical state of the constituent elements was characterized using X-ray photoelectron spectroscopy. The measured highest resistivity of the annealed film was found to be ~ 0.2 Ω-cm. Hence, our obtained results for the fabricated Cu3SbS3 thin films bring to light that these films would be good as absorber layer in solar cells due to their low resistivity, higher optical absorption coefficient (~ 105 cm− 1), low transmittance (< 5%) and an optical direct band gap of 1.6 eV in the visible range of the solar spectrum. Elsevier B.V. 2017 Article PeerReviewed Hussain, A. and Ahmed, R. and Ali, N. and Shaari, A. and Luo, J. T. and Fu, Y. Q. (2017) Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers. Surface and Coatings Technology, 319 . pp. 294-300. ISSN 0257-8972 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85017571801&doi=10.1016%2fj.surfcoat.2017.04.021&partnerID=40&md5=42feed032ca384b67012cf7f30b83200
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic QC Physics
spellingShingle QC Physics
Hussain, A.
Ahmed, R.
Ali, N.
Shaari, A.
Luo, J. T.
Fu, Y. Q.
Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers
description Copper antimony sulfide (Cu3SbS3) with a p-type conductivity and optical band gaps in the range of 1.38 to 1.84 eV is considered to be a promising solar harvesting material with non-toxic and economical elements. In this study, we reported the fabrication of Cu3SbS3 thin films using successive thermal evaporation of Cu2S and Sb2S3 layers followed by annealing in an argon atmosphere at a temperature range of 300–375 °C. The structural and optical properties of the as-deposited and annealed films were investigated. The annealed films notably show the crystalline phase of Cu3SbS3, identified from the X-ray diffraction analysis and endorsed by the Raman analysis as well, whereas the chemical state of the constituent elements was characterized using X-ray photoelectron spectroscopy. The measured highest resistivity of the annealed film was found to be ~ 0.2 Ω-cm. Hence, our obtained results for the fabricated Cu3SbS3 thin films bring to light that these films would be good as absorber layer in solar cells due to their low resistivity, higher optical absorption coefficient (~ 105 cm− 1), low transmittance (< 5%) and an optical direct band gap of 1.6 eV in the visible range of the solar spectrum.
format Article
author Hussain, A.
Ahmed, R.
Ali, N.
Shaari, A.
Luo, J. T.
Fu, Y. Q.
author_facet Hussain, A.
Ahmed, R.
Ali, N.
Shaari, A.
Luo, J. T.
Fu, Y. Q.
author_sort Hussain, A.
title Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers
title_short Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers
title_full Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers
title_fullStr Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers
title_full_unstemmed Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers
title_sort characterization of cu3sbs3 thin films grown by thermally diffusing cu2s and sb2s3 layers
publisher Elsevier B.V.
publishDate 2017
url http://eprints.utm.my/id/eprint/75643/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85017571801&doi=10.1016%2fj.surfcoat.2017.04.021&partnerID=40&md5=42feed032ca384b67012cf7f30b83200
_version_ 1643657120576438272
score 13.211869

Similar Items