Metal oxide-graphene field-effect transistor: interface trap density extraction model
A simple to implement model is presented to extract interface trap density of graphene field effect transistors. The presence of interface trap states detrimentally affects the device drain current-gate voltage relationship Ids-Vgs. At the moment, there is no analytical method available to extract t...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Beilstein-Institut Zur Forderung der Chemischen Wissenschaften
2016
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/72074/1/FarazNajam2016_MetalOxideGrapheneFieldEffectTransistor.pdf http://eprints.utm.my/id/eprint/72074/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-84990842235&doi=10.3762%2fbjnano.7.128&partnerID=40&md5=b4b0ca42f1c9cb625791d0d644f9e2cf |
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