Semi analytical modeling of quantum capacitance of graphene-based ion sensitive field effect transistor
Quantum capacitance as a one of the main characteristics of FET devices is in our focus in this paper. The quantum capacitance of graphene-based ion sensitive FET with an equivalent circuit is presented and also based on the analytical model a numerical solution is reported. The temperature effect o...
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| Main Authors: | , , , , , , |
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| 格式: | Article |
| 出版: |
American Scientific Publishers
2014
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| 主题: | |
| 在线阅读: | http://eprints.utm.my/id/eprint/62555/ http://dx.doi.org/10.1166/jctn.2014.3400 |
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