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Semi analytical modeling of quantum capacitance of graphene-based ion sensitive field effect transistor

Quantum capacitance as a one of the main characteristics of FET devices is in our focus in this paper. The quantum capacitance of graphene-based ion sensitive FET with an equivalent circuit is presented and also based on the analytical model a numerical solution is reported. The temperature effect o...

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Main Authors: Yusof, Rubiyah, Ahmadi, Mohammad Taghi, Feizabadi, Hediyeh Karimi, Naghib, Seyed Danial, Rahmani, Meisam, Kiani, Mohammadjavad, Ghadiri, Mahdiar Hosein
Format: Article
Published: American Scientific Publishers 2014
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/62555/
http://dx.doi.org/10.1166/jctn.2014.3400
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spelling my.utm.625552017-06-18T06:27:56Z http://eprints.utm.my/id/eprint/62555/ Semi analytical modeling of quantum capacitance of graphene-based ion sensitive field effect transistor Yusof, Rubiyah Ahmadi, Mohammad Taghi Feizabadi, Hediyeh Karimi Naghib, Seyed Danial Rahmani, Meisam Kiani, Mohammadjavad Ghadiri, Mahdiar Hosein TK Electrical engineering. Electronics Nuclear engineering Quantum capacitance as a one of the main characteristics of FET devices is in our focus in this paper. The quantum capacitance of graphene-based ion sensitive FET with an equivalent circuit is presented and also based on the analytical model a numerical solution is reported. The temperature effect on the quantum capacitance is highlighted, in which minimum capacitance dramatically rises by increasing the temperature. Furthermore, the capacitance model is adopted to derive current- voltage characteristic of the proposed device for different gate-source voltages. As the Vgs increases from 0.2 to 0.5 v, drain current (ID) is also rising. To further confirm this viewpoint, the presented analytical model is compared with experimental data and acceptable agreement is reported. American Scientific Publishers 2014 Article PeerReviewed Yusof, Rubiyah and Ahmadi, Mohammad Taghi and Feizabadi, Hediyeh Karimi and Naghib, Seyed Danial and Rahmani, Meisam and Kiani, Mohammadjavad and Ghadiri, Mahdiar Hosein (2014) Semi analytical modeling of quantum capacitance of graphene-based ion sensitive field effect transistor. Journal of Computational and Theoretical Nanoscience, 11 (3). pp. 596-600. ISSN 1546-1955 http://dx.doi.org/10.1166/jctn.2014.3400 DOI:10.1166/jctn.2014.3400
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Yusof, Rubiyah
Ahmadi, Mohammad Taghi
Feizabadi, Hediyeh Karimi
Naghib, Seyed Danial
Rahmani, Meisam
Kiani, Mohammadjavad
Ghadiri, Mahdiar Hosein
Semi analytical modeling of quantum capacitance of graphene-based ion sensitive field effect transistor
description Quantum capacitance as a one of the main characteristics of FET devices is in our focus in this paper. The quantum capacitance of graphene-based ion sensitive FET with an equivalent circuit is presented and also based on the analytical model a numerical solution is reported. The temperature effect on the quantum capacitance is highlighted, in which minimum capacitance dramatically rises by increasing the temperature. Furthermore, the capacitance model is adopted to derive current- voltage characteristic of the proposed device for different gate-source voltages. As the Vgs increases from 0.2 to 0.5 v, drain current (ID) is also rising. To further confirm this viewpoint, the presented analytical model is compared with experimental data and acceptable agreement is reported.
format Article
author Yusof, Rubiyah
Ahmadi, Mohammad Taghi
Feizabadi, Hediyeh Karimi
Naghib, Seyed Danial
Rahmani, Meisam
Kiani, Mohammadjavad
Ghadiri, Mahdiar Hosein
author_facet Yusof, Rubiyah
Ahmadi, Mohammad Taghi
Feizabadi, Hediyeh Karimi
Naghib, Seyed Danial
Rahmani, Meisam
Kiani, Mohammadjavad
Ghadiri, Mahdiar Hosein
author_sort Yusof, Rubiyah
title Semi analytical modeling of quantum capacitance of graphene-based ion sensitive field effect transistor
title_short Semi analytical modeling of quantum capacitance of graphene-based ion sensitive field effect transistor
title_full Semi analytical modeling of quantum capacitance of graphene-based ion sensitive field effect transistor
title_fullStr Semi analytical modeling of quantum capacitance of graphene-based ion sensitive field effect transistor
title_full_unstemmed Semi analytical modeling of quantum capacitance of graphene-based ion sensitive field effect transistor
title_sort semi analytical modeling of quantum capacitance of graphene-based ion sensitive field effect transistor
publisher American Scientific Publishers
publishDate 2014
url http://eprints.utm.my/id/eprint/62555/
http://dx.doi.org/10.1166/jctn.2014.3400
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score 13.211869

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