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Semi analytical modeling of quantum capacitance of graphene-based ion sensitive field effect transistor

Quantum capacitance as a one of the main characteristics of FET devices is in our focus in this paper. The quantum capacitance of graphene-based ion sensitive FET with an equivalent circuit is presented and also based on the analytical model a numerical solution is reported. The temperature effect o...

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書誌詳細
主要な著者:	Yusof, Rubiyah, Ahmadi, Mohammad Taghi, Feizabadi, Hediyeh Karimi, Naghib, Seyed Danial, Rahmani, Meisam, Kiani, Mohammadjavad, Ghadiri, Mahdiar Hosein
フォーマット:	論文
出版事項:	American Scientific Publishers 2014
主題:	TK Electrical engineering. Electronics Nuclear engineering
オンライン･アクセス:	http://eprints.utm.my/id/eprint/62555/ http://dx.doi.org/10.1166/jctn.2014.3400
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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