RF-to-DC characteristics of direct irradiated on-chip gallium arsenide schottky diode and antenna for application in proximity communication system
We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resist...
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| Main Authors: | , |
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| Format: | Article |
| Published: |
MDPI AG
2014
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/62482/ http://dx.doi.org/10.3390/s140203493 |
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