Seed/catalyst-free growth of gallium-based compound materials on graphene on insulator by electrochemical deposition at room temperature
We report the growth of gallium-based compounds, i.e., gallium oxynitride (GaON) and gallium oxide (Ga2O3) on multilayer graphene (MLG) on insulator using a mixture of ammonium nitrate (NH4NO3) and gallium nitrate (Ga(NO3)3) by electrochemical deposition (ECD) method at room temperature (RT) for the...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
Springer New York
2015
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/55389/ http://dx.doi.org/10.1186/s11671-015-0943-y |
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