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Seed/catalyst-free growth of gallium-based compound materials on graphene on insulator by electrochemical deposition at room temperature

We report the growth of gallium-based compounds, i.e., gallium oxynitride (GaON) and gallium oxide (Ga2O3) on multilayer graphene (MLG) on insulator using a mixture of ammonium nitrate (NH4NO3) and gallium nitrate (Ga(NO3)3) by electrochemical deposition (ECD) method at room temperature (RT) for the...

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Main Authors: Rashiddy Wong, Freddawati, Ahmed Ali, Amgad, Yasui, Kanji, Hashim, Abdul Manaf
Format: Article
Published: Springer New York 2015
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/55389/
http://dx.doi.org/10.1186/s11671-015-0943-y
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spelling my.utm.553892017-08-07T03:37:34Z http://eprints.utm.my/id/eprint/55389/ Seed/catalyst-free growth of gallium-based compound materials on graphene on insulator by electrochemical deposition at room temperature Rashiddy Wong, Freddawati Ahmed Ali, Amgad Yasui, Kanji Hashim, Abdul Manaf TK Electrical engineering. Electronics Nuclear engineering We report the growth of gallium-based compounds, i.e., gallium oxynitride (GaON) and gallium oxide (Ga2O3) on multilayer graphene (MLG) on insulator using a mixture of ammonium nitrate (NH4NO3) and gallium nitrate (Ga(NO3)3) by electrochemical deposition (ECD) method at room temperature (RT) for the first time. The controlling parameters of current density and electrolyte molarity were found to greatly influence the properties of the grown structures. The thicknesses of the deposited structures increase with the current density since it increases the chemical reaction rates. The layers grown at low molarities of both solutions basically show grain-like layer with cracking structures and dominated by both Ga2O3 and GaON. Such cracking structures seem to diminish with the increases of molarities of one of the solutions. It is speculated that the increase of current density and ions in the solutions helps to promote the growth at the area with uneven thicknesses of graphene. When the molarity of Ga(NO3)3 is increased while keeping the molarity of NH4NO3 at the lowest value of 2.5 M, the grown structures are basically dominated by the Ga2O3 structure. On the other hand, when the molarity of NH4NO3 is increased while keeping the molarity of Ga(NO3)3 at the lowest value of 0.8 M, the GaON structure seems to dominate where their cubic and hexagonal arrangements are coexisting. It was found that when the molarities of Ga(NO3)3 are at the high level of 7.5 M, the grown structures tend to be dominated by Ga2O3 even though the molarity of NH4NO3 is made equal or higher than the molarity of Ga(NO3)3. When the grown structure is dominated by the Ga2O3 structure, the deposition process became slow or unstable, resulting to the formation of thin layer. When the molarity of Ga(NO3)3 is increased to 15 M, the nanocluster-like structures were formed instead of continuous thin film structure. This study seems to successfully provide the conditions in growing either GaON-dominated or Ga2O3-dominated structure by a simple and low-cost ECD. The next possible routes to convert the grown GaON-dominated structure to either single-crystalline GaN or Ga2O3 as well as Ga2O3-dominated structure to single-crystalline Ga2O3 structure have been discussed. Springer New York 2015-12-04 Article PeerReviewed Rashiddy Wong, Freddawati and Ahmed Ali, Amgad and Yasui, Kanji and Hashim, Abdul Manaf (2015) Seed/catalyst-free growth of gallium-based compound materials on graphene on insulator by electrochemical deposition at room temperature. Nanoscale Research Letters, 10 (1). pp. 233-243. ISSN 1931-7573 http://dx.doi.org/10.1186/s11671-015-0943-y DOI:10.1186/s11671-015-0943-y
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Rashiddy Wong, Freddawati
Ahmed Ali, Amgad
Yasui, Kanji
Hashim, Abdul Manaf
Seed/catalyst-free growth of gallium-based compound materials on graphene on insulator by electrochemical deposition at room temperature
description We report the growth of gallium-based compounds, i.e., gallium oxynitride (GaON) and gallium oxide (Ga2O3) on multilayer graphene (MLG) on insulator using a mixture of ammonium nitrate (NH4NO3) and gallium nitrate (Ga(NO3)3) by electrochemical deposition (ECD) method at room temperature (RT) for the first time. The controlling parameters of current density and electrolyte molarity were found to greatly influence the properties of the grown structures. The thicknesses of the deposited structures increase with the current density since it increases the chemical reaction rates. The layers grown at low molarities of both solutions basically show grain-like layer with cracking structures and dominated by both Ga2O3 and GaON. Such cracking structures seem to diminish with the increases of molarities of one of the solutions. It is speculated that the increase of current density and ions in the solutions helps to promote the growth at the area with uneven thicknesses of graphene. When the molarity of Ga(NO3)3 is increased while keeping the molarity of NH4NO3 at the lowest value of 2.5 M, the grown structures are basically dominated by the Ga2O3 structure. On the other hand, when the molarity of NH4NO3 is increased while keeping the molarity of Ga(NO3)3 at the lowest value of 0.8 M, the GaON structure seems to dominate where their cubic and hexagonal arrangements are coexisting. It was found that when the molarities of Ga(NO3)3 are at the high level of 7.5 M, the grown structures tend to be dominated by Ga2O3 even though the molarity of NH4NO3 is made equal or higher than the molarity of Ga(NO3)3. When the grown structure is dominated by the Ga2O3 structure, the deposition process became slow or unstable, resulting to the formation of thin layer. When the molarity of Ga(NO3)3 is increased to 15 M, the nanocluster-like structures were formed instead of continuous thin film structure. This study seems to successfully provide the conditions in growing either GaON-dominated or Ga2O3-dominated structure by a simple and low-cost ECD. The next possible routes to convert the grown GaON-dominated structure to either single-crystalline GaN or Ga2O3 as well as Ga2O3-dominated structure to single-crystalline Ga2O3 structure have been discussed.
format Article
author Rashiddy Wong, Freddawati
Ahmed Ali, Amgad
Yasui, Kanji
Hashim, Abdul Manaf
author_facet Rashiddy Wong, Freddawati
Ahmed Ali, Amgad
Yasui, Kanji
Hashim, Abdul Manaf
author_sort Rashiddy Wong, Freddawati
title Seed/catalyst-free growth of gallium-based compound materials on graphene on insulator by electrochemical deposition at room temperature
title_short Seed/catalyst-free growth of gallium-based compound materials on graphene on insulator by electrochemical deposition at room temperature
title_full Seed/catalyst-free growth of gallium-based compound materials on graphene on insulator by electrochemical deposition at room temperature
title_fullStr Seed/catalyst-free growth of gallium-based compound materials on graphene on insulator by electrochemical deposition at room temperature
title_full_unstemmed Seed/catalyst-free growth of gallium-based compound materials on graphene on insulator by electrochemical deposition at room temperature
title_sort seed/catalyst-free growth of gallium-based compound materials on graphene on insulator by electrochemical deposition at room temperature
publisher Springer New York
publishDate 2015
url http://eprints.utm.my/id/eprint/55389/
http://dx.doi.org/10.1186/s11671-015-0943-y
_version_ 1643653782566862848
score 13.211869

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