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Large signal model of heterojunction bipolar transistor InP/InGaAs as an optoelectronic mixer

A large-signal model of InP/InGaAs single Heterojunction Bipolar Transistor (HBT) has been developed considering spectral performance and mixing. This model is based on Gummel Poon BJT model. HBT InP/InGaAs has been modeled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT propose...

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Main Authors: Shaharuddin, Nur Amirah, Idrus, Sevia Mahdaliza, Isaak, Suhaila, A. Mohamed, Norliza, Yusni, N. A. A.
Format: Article
Language:English
Published: Penerbit UTM 2014
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/53301/1/SuhailaIsaak2014_Largesignalmodelofheterojunction.pdf
http://eprints.utm.my/id/eprint/53301/
http://dx.doi.org/10.11113/jt.v67.2761
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spelling my.utm.533012018-07-25T07:55:30Z http://eprints.utm.my/id/eprint/53301/ Large signal model of heterojunction bipolar transistor InP/InGaAs as an optoelectronic mixer Shaharuddin, Nur Amirah Idrus, Sevia Mahdaliza Isaak, Suhaila A. Mohamed, Norliza Yusni, N. A. A. TK Electrical engineering. Electronics Nuclear engineering A large-signal model of InP/InGaAs single Heterojunction Bipolar Transistor (HBT) has been developed considering spectral performance and mixing. This model is based on Gummel Poon BJT model. HBT InP/InGaAs has been modeled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1310 nm for an up-conversion frequency of 30 GHz. Its characteristics was further investigated to develop the appropriate structure device for OEM application. This proposed HBT InP/InGaAs can be potentially implemented in the broadband Radio over Fiber (RoF) system to perform photodetection and frequency up-conversion Penerbit UTM 2014 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/53301/1/SuhailaIsaak2014_Largesignalmodelofheterojunction.pdf Shaharuddin, Nur Amirah and Idrus, Sevia Mahdaliza and Isaak, Suhaila and A. Mohamed, Norliza and Yusni, N. A. A. (2014) Large signal model of heterojunction bipolar transistor InP/InGaAs as an optoelectronic mixer. Jurnal Teknologi (Sciences and Engineering), 67 (3). pp. 33-36. ISSN 2180-3722 http://dx.doi.org/10.11113/jt.v67.2761
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Shaharuddin, Nur Amirah
Idrus, Sevia Mahdaliza
Isaak, Suhaila
A. Mohamed, Norliza
Yusni, N. A. A.
Large signal model of heterojunction bipolar transistor InP/InGaAs as an optoelectronic mixer
description A large-signal model of InP/InGaAs single Heterojunction Bipolar Transistor (HBT) has been developed considering spectral performance and mixing. This model is based on Gummel Poon BJT model. HBT InP/InGaAs has been modeled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1310 nm for an up-conversion frequency of 30 GHz. Its characteristics was further investigated to develop the appropriate structure device for OEM application. This proposed HBT InP/InGaAs can be potentially implemented in the broadband Radio over Fiber (RoF) system to perform photodetection and frequency up-conversion
format Article
author Shaharuddin, Nur Amirah
Idrus, Sevia Mahdaliza
Isaak, Suhaila
A. Mohamed, Norliza
Yusni, N. A. A.
author_facet Shaharuddin, Nur Amirah
Idrus, Sevia Mahdaliza
Isaak, Suhaila
A. Mohamed, Norliza
Yusni, N. A. A.
author_sort Shaharuddin, Nur Amirah
title Large signal model of heterojunction bipolar transistor InP/InGaAs as an optoelectronic mixer
title_short Large signal model of heterojunction bipolar transistor InP/InGaAs as an optoelectronic mixer
title_full Large signal model of heterojunction bipolar transistor InP/InGaAs as an optoelectronic mixer
title_fullStr Large signal model of heterojunction bipolar transistor InP/InGaAs as an optoelectronic mixer
title_full_unstemmed Large signal model of heterojunction bipolar transistor InP/InGaAs as an optoelectronic mixer
title_sort large signal model of heterojunction bipolar transistor inp/ingaas as an optoelectronic mixer
publisher Penerbit UTM
publishDate 2014
url http://eprints.utm.my/id/eprint/53301/1/SuhailaIsaak2014_Largesignalmodelofheterojunction.pdf
http://eprints.utm.my/id/eprint/53301/
http://dx.doi.org/10.11113/jt.v67.2761
_version_ 1643653317133336576
score 13.211869

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