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Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process

This project report focuses on the “Design of Low Power 900 MHz Complementary Metal Oxide Semiconductor Voltage Controlled Oscillator For 0.25 µm Process”. It covers the development and characterization of the VCO using Taiwan Semiconductor Manufacturing Company (TSMC) technologies. The main objecti...

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Main Author: Zahari, Muhamad Iskandar
Format: Thesis
Published: 2014
Subjects:
TJ Mechanical engineering and machinery
Online Access:http://eprints.utm.my/id/eprint/48396/
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spelling my.utm.483962017-08-07T01:09:21Z http://eprints.utm.my/id/eprint/48396/ Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process Zahari, Muhamad Iskandar TJ Mechanical engineering and machinery This project report focuses on the “Design of Low Power 900 MHz Complementary Metal Oxide Semiconductor Voltage Controlled Oscillator For 0.25 µm Process”. It covers the development and characterization of the VCO using Taiwan Semiconductor Manufacturing Company (TSMC) technologies. The main objective of this project is to design circuit and layout with low power and minimum layout area by applying inductance/capacitance (LC) tank architecture. The VCO on-chip circuit design is capable to perform operation at 900 MHz. The simulation of circuit and layout drawing will be accomplished using Tanner EDA Software Tool. The schematic was drawn using S-EDIT, simulation was done with T_SPICE and layout with L-EDIT. Low power saving design technique at IDLE is introduced by “powersave” terminal from power management block (not covered in this project). The power reduction technique reduces power from milliwatt range to nanowatt range at typical condition. The design was optimized to meet specifications for mobile device applications 2014 Thesis NonPeerReviewed Zahari, Muhamad Iskandar (2014) Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process. Masters thesis, Universiti Teknologi Malaysia, Faculty of Electrical Engineering.
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TJ Mechanical engineering and machinery
spellingShingle TJ Mechanical engineering and machinery
Zahari, Muhamad Iskandar
Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
description This project report focuses on the “Design of Low Power 900 MHz Complementary Metal Oxide Semiconductor Voltage Controlled Oscillator For 0.25 µm Process”. It covers the development and characterization of the VCO using Taiwan Semiconductor Manufacturing Company (TSMC) technologies. The main objective of this project is to design circuit and layout with low power and minimum layout area by applying inductance/capacitance (LC) tank architecture. The VCO on-chip circuit design is capable to perform operation at 900 MHz. The simulation of circuit and layout drawing will be accomplished using Tanner EDA Software Tool. The schematic was drawn using S-EDIT, simulation was done with T_SPICE and layout with L-EDIT. Low power saving design technique at IDLE is introduced by “powersave” terminal from power management block (not covered in this project). The power reduction technique reduces power from milliwatt range to nanowatt range at typical condition. The design was optimized to meet specifications for mobile device applications
format Thesis
author Zahari, Muhamad Iskandar
author_facet Zahari, Muhamad Iskandar
author_sort Zahari, Muhamad Iskandar
title Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title_short Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title_full Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title_fullStr Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title_full_unstemmed Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title_sort design of low power 900mhz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
publishDate 2014
url http://eprints.utm.my/id/eprint/48396/
_version_ 1643652547847651328
score 13.211869

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