Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
This project report focuses on the “Design of Low Power 900 MHz Complementary Metal Oxide Semiconductor Voltage Controlled Oscillator For 0.25 µm Process”. It covers the development and characterization of the VCO using Taiwan Semiconductor Manufacturing Company (TSMC) technologies. The main objecti...
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Published: |
2014
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/48396/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | This project report focuses on the “Design of Low Power 900 MHz Complementary Metal Oxide Semiconductor Voltage Controlled Oscillator For 0.25 µm Process”. It covers the development and characterization of the VCO using Taiwan Semiconductor Manufacturing Company (TSMC) technologies. The main objective of this project is to design circuit and layout with low power and minimum layout area by applying inductance/capacitance (LC) tank architecture. The VCO on-chip circuit design is capable to perform operation at 900 MHz. The simulation of circuit and layout drawing will be accomplished using Tanner EDA Software Tool. The schematic was drawn using S-EDIT, simulation was done with T_SPICE and layout with L-EDIT. Low power saving design technique at IDLE is introduced by “powersave” terminal from power management block (not covered in this project). The power reduction technique reduces power from milliwatt range to nanowatt range at typical condition. The design was optimized to meet specifications for mobile device applications |
|---|