Dual-functional on-chip algaas/gaas schottky diode for rf power detection and low-power recten applications
A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barri...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
M D P I AG
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/44866/ http://dx.doi.org/10.3390/s110808127 |
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