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Effects of chemical mechanical polishing (CMP) parameters on NIP/AL substrate surface characteristics

Chemical Mechanical Polishing (CMP) process is widely used for global planarization of substrate and wafer technology. The purpose of the CMP is to ensure wide planarization, uniformity, precise surface finish and non-defective surface. CMP has been used in the Hard Disk Drive industry as a final pr...

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Main Author: Rosli, Mohd. Aidil
Format: Thesis
Language:English
Published: 2014
Subjects:
TJ Mechanical engineering and machinery
Online Access:http://eprints.utm.my/id/eprint/41826/1/MohdAidilRosliMFKM2014.pdf
http://eprints.utm.my/id/eprint/41826/
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spelling my.utm.418262017-09-11T06:05:12Z http://eprints.utm.my/id/eprint/41826/ Effects of chemical mechanical polishing (CMP) parameters on NIP/AL substrate surface characteristics Rosli, Mohd. Aidil TJ Mechanical engineering and machinery Chemical Mechanical Polishing (CMP) process is widely used for global planarization of substrate and wafer technology. The purpose of the CMP is to ensure wide planarization, uniformity, precise surface finish and non-defective surface. CMP has been used in the Hard Disk Drive industry as a final process at the substrate level to provide super fine finish of the substrate surface. With the tremendous demand for increased substrate storage capacity over the years, the Head Media Spacing (HMS) between substrate and slider become more stringent. It is desirable to achieve lower HMS in order to enable good writeablity and strong read back signal integrity and thus will improve the reliability of the slider inside the HDD. The reduction on HMS will lead to more stringent substrate surface finish requirement. Since there is no defined mathematical model of current in heritage process for Johor Bahru Substrate Plant A, this study will investigate effects of the CMP parameters on the NiP/Al substrate by using Design of Experiment (DOE) approach. A better understanding of the interaction behavior between various parameters and the effect on the material removal rate, substrate roughness and waviness is achieved by using statistical analysis technique. Mathematical model were derived and optimal solution is proposed to further improve the process. 2014-01 Thesis NonPeerReviewed application/pdf en http://eprints.utm.my/id/eprint/41826/1/MohdAidilRosliMFKM2014.pdf Rosli, Mohd. Aidil (2014) Effects of chemical mechanical polishing (CMP) parameters on NIP/AL substrate surface characteristics. Masters thesis, Universiti Teknologi Malaysia, Faculty of Mechanical Engineering.
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TJ Mechanical engineering and machinery
spellingShingle TJ Mechanical engineering and machinery
Rosli, Mohd. Aidil
Effects of chemical mechanical polishing (CMP) parameters on NIP/AL substrate surface characteristics
description Chemical Mechanical Polishing (CMP) process is widely used for global planarization of substrate and wafer technology. The purpose of the CMP is to ensure wide planarization, uniformity, precise surface finish and non-defective surface. CMP has been used in the Hard Disk Drive industry as a final process at the substrate level to provide super fine finish of the substrate surface. With the tremendous demand for increased substrate storage capacity over the years, the Head Media Spacing (HMS) between substrate and slider become more stringent. It is desirable to achieve lower HMS in order to enable good writeablity and strong read back signal integrity and thus will improve the reliability of the slider inside the HDD. The reduction on HMS will lead to more stringent substrate surface finish requirement. Since there is no defined mathematical model of current in heritage process for Johor Bahru Substrate Plant A, this study will investigate effects of the CMP parameters on the NiP/Al substrate by using Design of Experiment (DOE) approach. A better understanding of the interaction behavior between various parameters and the effect on the material removal rate, substrate roughness and waviness is achieved by using statistical analysis technique. Mathematical model were derived and optimal solution is proposed to further improve the process.
format Thesis
author Rosli, Mohd. Aidil
author_facet Rosli, Mohd. Aidil
author_sort Rosli, Mohd. Aidil
title Effects of chemical mechanical polishing (CMP) parameters on NIP/AL substrate surface characteristics
title_short Effects of chemical mechanical polishing (CMP) parameters on NIP/AL substrate surface characteristics
title_full Effects of chemical mechanical polishing (CMP) parameters on NIP/AL substrate surface characteristics
title_fullStr Effects of chemical mechanical polishing (CMP) parameters on NIP/AL substrate surface characteristics
title_full_unstemmed Effects of chemical mechanical polishing (CMP) parameters on NIP/AL substrate surface characteristics
title_sort effects of chemical mechanical polishing (cmp) parameters on nip/al substrate surface characteristics
publishDate 2014
url http://eprints.utm.my/id/eprint/41826/1/MohdAidilRosliMFKM2014.pdf
http://eprints.utm.my/id/eprint/41826/
_version_ 1643650721501937664
score 13.211869

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