Effects of chemical mechanical polishing (CMP) parameters on NIP/AL substrate surface characteristics

Chemical Mechanical Polishing (CMP) process is widely used for global planarization of substrate and wafer technology. The purpose of the CMP is to ensure wide planarization, uniformity, precise surface finish and non-defective surface. CMP has been used in the Hard Disk Drive industry as a final pr...

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Bibliographic Details
Main Author: Rosli, Mohd. Aidil
Format: Thesis
Language:English
Published: 2014
Subjects:
Online Access:http://eprints.utm.my/id/eprint/41826/1/MohdAidilRosliMFKM2014.pdf
http://eprints.utm.my/id/eprint/41826/
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