Synthesis and analysis of silicon nanowires grown on Si (111) substrate at different silane gas flow rate
Silicon nanowires were grown on Si (111) substrates by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). The nanowires were grouted at 450 °C and 21 watt RF power. Pure silane (99.9995%) and gold colloid were used as precursor and catalyst respectively for growth of wires. T...
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| Main Authors: | , , , |
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| Format: | Article |
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Journal Solid State Science and Technology
2012
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/33066/ http://journal.masshp.net/wp-content/uploads/Journal/2012/Habib%20Hamidinezhad%2035-40.pdf |
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