Prediction of n-AlGaAs/GaAs Schottky diode properties for milliwatt range application
The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device application without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the A1GaAs/GaAs HEMT Schottky diode is presented. The RF sign...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IDOSI Publications
2010
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/25971/2/9.pdf http://eprints.utm.my/id/eprint/25971/ http://www.idosi.org/wasj/wasj9(Nanotechnology)10/9.pdf |
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