Modeling of temperature variations in MOSFET mismatch for circuit simulations
Temperature effect is one of the critical factors in manufacturing variability which could affect the designed circuit. This paper presents a MOSFET mismatch model with the consideration of temperature variations using physical based SPICE model parameters. The model development includes the mismatc...
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Institute of Electrical and Electronics Engineers
2009
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| Online Access: | http://eprints.utm.my/id/eprint/12975/ http://dx.doi.org/10.1109/ASQED.2009.5206238 |
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my.utm.129752017-10-04T07:05:20Z http://eprints.utm.my/id/eprint/12975/ Modeling of temperature variations in MOSFET mismatch for circuit simulations Ismail, Muhamad Amri Md. Nasir, Iskhandar Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering Temperature effect is one of the critical factors in manufacturing variability which could affect the designed circuit. This paper presents a MOSFET mismatch model with the consideration of temperature variations using physical based SPICE model parameters. The model development includes the mismatch measurement at different temperatures and enhancement of standard device model card. Mismatch temperature coefficients with respect to threshold voltage and carrier mobility are used to improve the prediction of mismatch model. The comparison between measured and Monte Carlo simulated data is presented for the verification purpose. The model is applied into the circuit design example to show the significant of the extracted mismatch temperature coefficients. Institute of Electrical and Electronics Engineers 2009 Book Section PeerReviewed Ismail, Muhamad Amri and Md. Nasir, Iskhandar and Ismail, Razali (2009) Modeling of temperature variations in MOSFET mismatch for circuit simulations. In: 2009 1st Asia Symposium on Quality Electronic Design, ASQED 2009. Institute of Electrical and Electronics Engineers, New York, 357 -362. ISBN 978-142444952-1 http://dx.doi.org/10.1109/ASQED.2009.5206238 doi:10.1109/ASQED.2009.5206238 |
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TK Electrical engineering. Electronics Nuclear engineering Ismail, Muhamad Amri Md. Nasir, Iskhandar Ismail, Razali Modeling of temperature variations in MOSFET mismatch for circuit simulations |
| description |
Temperature effect is one of the critical factors in manufacturing variability which could affect the designed circuit. This paper presents a MOSFET mismatch model with the consideration of temperature variations using physical based SPICE model parameters. The model development includes the mismatch measurement at different temperatures and enhancement of standard device model card. Mismatch temperature coefficients with respect to threshold voltage and carrier mobility are used to improve the prediction of mismatch model. The comparison between measured and Monte Carlo simulated data is presented for the verification purpose. The model is applied into the circuit design example to show the significant of the extracted mismatch temperature coefficients. |
| format |
Book Section |
| author |
Ismail, Muhamad Amri Md. Nasir, Iskhandar Ismail, Razali |
| author_facet |
Ismail, Muhamad Amri Md. Nasir, Iskhandar Ismail, Razali |
| author_sort |
Ismail, Muhamad Amri |
| title |
Modeling of temperature variations in MOSFET mismatch for circuit simulations |
| title_short |
Modeling of temperature variations in MOSFET mismatch for circuit simulations |
| title_full |
Modeling of temperature variations in MOSFET mismatch for circuit simulations |
| title_fullStr |
Modeling of temperature variations in MOSFET mismatch for circuit simulations |
| title_full_unstemmed |
Modeling of temperature variations in MOSFET mismatch for circuit simulations |
| title_sort |
modeling of temperature variations in mosfet mismatch for circuit simulations |
| publisher |
Institute of Electrical and Electronics Engineers |
| publishDate |
2009 |
| url |
http://eprints.utm.my/id/eprint/12975/ http://dx.doi.org/10.1109/ASQED.2009.5206238 |
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1643646083187867648 |
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13.211869 |