Modelling and simulation of 2d aluminium-doped silicene transport properties in field-effect transistors
One of the more-than-Moore approaches is to use two-dimensional (2D) silicene as the channel in a transistor. Silicene shares outstanding electronic properties with graphene, yet provides an added advantage in terms of its compatibility with silicon (Si) wafer technology. However, pristine silicene...
Saved in:
Main Author: | Chuan, Mu Wen |
---|---|
Format: | Thesis |
Language: | English |
Published: |
2021
|
Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/102406/1/ChuanMuWenPSKE2021.pdf.pdf http://eprints.utm.my/id/eprint/102406/ http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:149256 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Device performance of silicene nanoribbon field-effect transistor under ballistic transport
by: Chuan, Mu Wen, et al.
Published: (2020) -
2D honeycomb silicon: A review on theoretical advances for silicene field-effect transistors
by: Chuan, Mu Wen, et al.
Published: (2020) -
Device performance of silicene nanoribbon field-effect transistor under ballistic transport
by: Chuan, M. W., et al.
Published: (2020) -
Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure
by: Chuan, M. W., et al.
Published: (2020) -
Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model
by: Chuan, Mu Wen, et al.
Published: (2022)