Staff View: Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties

Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties

The effects of variation of sputtering pressure of AlN HiPIMS deposition on Si substrate to the structure and electrical properties were investigated through XRD, AFM and impedance spectroscopy method. The strong preferred 100-plane AlN was observed for all samples from XRD pattern. The AlN thin fil...

Full description

Saved in:

Bibliographic Details
Main Authors:	Azman, Zulkifli, Nayan, Nafarizal, Megat Hasnan, Megat Muhammad Ikhsan, Abu Bakar, Ahmad Shuhaimi, Mamat, Mohamad Hafiz, Mohd. Yusop, Mohd. Zamri
Format:	Article
Published:	Inderscience Publishers 2022
Subjects:	TJ Mechanical engineering and machinery
Online Access:	http://eprints.utm.my/id/eprint/101370/ http://dx.doi.org/10.1504/IJNT.2022.124519
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my.utm.101370
record_format	eprints
spelling	my.utm.1013702023-06-08T09:55:24Z http://eprints.utm.my/id/eprint/101370/ Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties Azman, Zulkifli Nayan, Nafarizal Megat Hasnan, Megat Muhammad Ikhsan Abu Bakar, Ahmad Shuhaimi Mamat, Mohamad Hafiz Mohd. Yusop, Mohd. Zamri TJ Mechanical engineering and machinery The effects of variation of sputtering pressure of AlN HiPIMS deposition on Si substrate to the structure and electrical properties were investigated through XRD, AFM and impedance spectroscopy method. The strong preferred 100-plane AlN was observed for all samples from XRD pattern. The AlN thin film thickness was observed decrease with the increase of sputtering pressure. AFM analysis shows the lowest surface roughness at 0.84 nm for 5 mTorr sputtering pressure. Impedance spectroscopy analysis of Al/100-plane AlN/Si MIS structure shows the electrical conductivity of AlN was directly proportional to the sputtering pressure and stable with temperature ranging from room temperature (299 K) to 353 K. Good dielectric stability was achieved at 3 mTorr sputtering pressure for all variation temperature and the dielectric constant calculated at average 3.5. Inderscience Publishers 2022 Article PeerReviewed Azman, Zulkifli and Nayan, Nafarizal and Megat Hasnan, Megat Muhammad Ikhsan and Abu Bakar, Ahmad Shuhaimi and Mamat, Mohamad Hafiz and Mohd. Yusop, Mohd. Zamri (2022) Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties. International Journal of Nanotechnology, 19 (2-5). 404 -417. ISSN 1475-7435 http://dx.doi.org/10.1504/IJNT.2022.124519 DOI: 10.1504/IJNT.2022.124519
institution	Universiti Teknologi Malaysia
building	UTM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Teknologi Malaysia
content_source	UTM Institutional Repository
url_provider	http://eprints.utm.my/
topic	TJ Mechanical engineering and machinery
spellingShingle	TJ Mechanical engineering and machinery Azman, Zulkifli Nayan, Nafarizal Megat Hasnan, Megat Muhammad Ikhsan Abu Bakar, Ahmad Shuhaimi Mamat, Mohamad Hafiz Mohd. Yusop, Mohd. Zamri Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties
description	The effects of variation of sputtering pressure of AlN HiPIMS deposition on Si substrate to the structure and electrical properties were investigated through XRD, AFM and impedance spectroscopy method. The strong preferred 100-plane AlN was observed for all samples from XRD pattern. The AlN thin film thickness was observed decrease with the increase of sputtering pressure. AFM analysis shows the lowest surface roughness at 0.84 nm for 5 mTorr sputtering pressure. Impedance spectroscopy analysis of Al/100-plane AlN/Si MIS structure shows the electrical conductivity of AlN was directly proportional to the sputtering pressure and stable with temperature ranging from room temperature (299 K) to 353 K. Good dielectric stability was achieved at 3 mTorr sputtering pressure for all variation temperature and the dielectric constant calculated at average 3.5.
format	Article
author	Azman, Zulkifli Nayan, Nafarizal Megat Hasnan, Megat Muhammad Ikhsan Abu Bakar, Ahmad Shuhaimi Mamat, Mohamad Hafiz Mohd. Yusop, Mohd. Zamri
author_facet	Azman, Zulkifli Nayan, Nafarizal Megat Hasnan, Megat Muhammad Ikhsan Abu Bakar, Ahmad Shuhaimi Mamat, Mohamad Hafiz Mohd. Yusop, Mohd. Zamri
author_sort	Azman, Zulkifli
title	Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties
title_short	Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties
title_full	Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties
title_fullStr	Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties
title_full_unstemmed	Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties
title_sort	impedance spectroscopy analysis of al/100-plane aln/p-si mis prepared by hipims method for tailoring dielectric properties
publisher	Inderscience Publishers
publishDate	2022
url	http://eprints.utm.my/id/eprint/101370/ http://dx.doi.org/10.1504/IJNT.2022.124519
_version_	1769842045154754560
score	13.211869

Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties

Similar Items