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Formation And Evaluation Of Silicon Substrate With Highly-Doped Porous Si Layers Formed By Metal-Assisted Chemical Etching

Porous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear contact...

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Main Authors: Ono, Takahito, Li, Yi Jie, Wang, Zhuqing, Toan, Nguyen Van, Samat, Khairul Fadzli
Format: Article
Language:English
Published: Springer 2021
Online Access:http://eprints.utem.edu.my/id/eprint/25635/2/2021_1%20Q1%20ARTICLE_FORMATIONANDEVALUATIONOFSILICO.PDF
http://eprints.utem.edu.my/id/eprint/25635/
https://nanoscalereslett.springeropen.com/track/pdf/10.1186/s11671-021-03524-z.pdf
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spelling my.utem.eprints.256352022-03-08T12:44:12Z http://eprints.utem.edu.my/id/eprint/25635/ Formation And Evaluation Of Silicon Substrate With Highly-Doped Porous Si Layers Formed By Metal-Assisted Chemical Etching Ono, Takahito Li, Yi Jie Wang, Zhuqing Toan, Nguyen Van Samat, Khairul Fadzli Porous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear contact between porous Si and metal is one reason for the reduction of electrical conductivity. In this paper, p- and n-type porous Si were formed on Si substrate by metal-assisted chemical etching. To decrease contact resistance, p- and n-type spin on dopants are employed to dope an impurity element into p- and n-type porous Si surface, respectively. Compared to the Si substrate with undoped porous samples, ohmic contact can be obtained, and the electrical conductivity of doped p- and n-type porous Si can be improved to 1160 and 1390 S/m, respectively. Compared with the Si substrate, the special contact resistances for the doped p- and n-type porous Si layer decreases to 1.35 and 1.16 mΩ/cm2, respectively, by increasing the carrier concentration. However, the increase of the carrier concentration induces the decline of the Seebeck coefcient for p- and n-type Si substrates with doped porous Si samples to 491 and 480 μV/K, respectively. Power factor is related to the Seebeck coefcient and electrical conductivity of thermoelectric material, which is one vital factor that evaluates its output performance. Therefore, even though the Seebeck coefcient values of Si substrates with doped porous Si samples decrease, the doped porous Si layer can improve the power factor compared to undoped samples due to the enhancement of electrical conductivity, which facilitates its development for thermoelectric application. Springer 2021 Article PeerReviewed text en http://eprints.utem.edu.my/id/eprint/25635/2/2021_1%20Q1%20ARTICLE_FORMATIONANDEVALUATIONOFSILICO.PDF Ono, Takahito and Li, Yi Jie and Wang, Zhuqing and Toan, Nguyen Van and Samat, Khairul Fadzli (2021) Formation And Evaluation Of Silicon Substrate With Highly-Doped Porous Si Layers Formed By Metal-Assisted Chemical Etching. Nanoscale Research Letters, 16 (64). pp. 1-8. ISSN 1931-7573 https://nanoscalereslett.springeropen.com/track/pdf/10.1186/s11671-021-03524-z.pdf 10.1186/s11671-021-03524-z
institution Universiti Teknikal Malaysia Melaka
building UTEM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknikal Malaysia Melaka
content_source UTEM Institutional Repository
url_provider http://eprints.utem.edu.my/
language English
description Porous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear contact between porous Si and metal is one reason for the reduction of electrical conductivity. In this paper, p- and n-type porous Si were formed on Si substrate by metal-assisted chemical etching. To decrease contact resistance, p- and n-type spin on dopants are employed to dope an impurity element into p- and n-type porous Si surface, respectively. Compared to the Si substrate with undoped porous samples, ohmic contact can be obtained, and the electrical conductivity of doped p- and n-type porous Si can be improved to 1160 and 1390 S/m, respectively. Compared with the Si substrate, the special contact resistances for the doped p- and n-type porous Si layer decreases to 1.35 and 1.16 mΩ/cm2, respectively, by increasing the carrier concentration. However, the increase of the carrier concentration induces the decline of the Seebeck coefcient for p- and n-type Si substrates with doped porous Si samples to 491 and 480 μV/K, respectively. Power factor is related to the Seebeck coefcient and electrical conductivity of thermoelectric material, which is one vital factor that evaluates its output performance. Therefore, even though the Seebeck coefcient values of Si substrates with doped porous Si samples decrease, the doped porous Si layer can improve the power factor compared to undoped samples due to the enhancement of electrical conductivity, which facilitates its development for thermoelectric application.
format Article
author Ono, Takahito
Li, Yi Jie
Wang, Zhuqing
Toan, Nguyen Van
Samat, Khairul Fadzli
spellingShingle Ono, Takahito
Li, Yi Jie
Wang, Zhuqing
Toan, Nguyen Van
Samat, Khairul Fadzli
Formation And Evaluation Of Silicon Substrate With Highly-Doped Porous Si Layers Formed By Metal-Assisted Chemical Etching
author_facet Ono, Takahito
Li, Yi Jie
Wang, Zhuqing
Toan, Nguyen Van
Samat, Khairul Fadzli
author_sort Ono, Takahito
title Formation And Evaluation Of Silicon Substrate With Highly-Doped Porous Si Layers Formed By Metal-Assisted Chemical Etching
title_short Formation And Evaluation Of Silicon Substrate With Highly-Doped Porous Si Layers Formed By Metal-Assisted Chemical Etching
title_full Formation And Evaluation Of Silicon Substrate With Highly-Doped Porous Si Layers Formed By Metal-Assisted Chemical Etching
title_fullStr Formation And Evaluation Of Silicon Substrate With Highly-Doped Porous Si Layers Formed By Metal-Assisted Chemical Etching
title_full_unstemmed Formation And Evaluation Of Silicon Substrate With Highly-Doped Porous Si Layers Formed By Metal-Assisted Chemical Etching
title_sort formation and evaluation of silicon substrate with highly-doped porous si layers formed by metal-assisted chemical etching
publisher Springer
publishDate 2021
url http://eprints.utem.edu.my/id/eprint/25635/2/2021_1%20Q1%20ARTICLE_FORMATIONANDEVALUATIONOFSILICO.PDF
http://eprints.utem.edu.my/id/eprint/25635/
https://nanoscalereslett.springeropen.com/track/pdf/10.1186/s11671-021-03524-z.pdf
_version_ 1726796000042942464
score 13.211869

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