Various doping concentration effect on silicon on insulator (SOI) phase modulator
This paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode structure....
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my.utem.eprints.151642015-10-29T08:06:03Z http://eprints.utem.edu.my/id/eprint/15164/ Various doping concentration effect on silicon on insulator (SOI) phase modulator Mardiana, Bidin Hazura, Haroon Hanim, Abdul Razak Sahbudin, Saari Huda, Abdullah TK Electrical engineering. Electronics Nuclear engineering This paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode structure. The electrical device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The least doping concentration of p+ and n+ region produces the least change of refractive index of the modulator. Meanwhile, results show that by increasing the doping concentrations, the value of Iπ decreases. This means that the phase modulator performance is better with increased doping concentrations. 2010 Conference or Workshop Item PeerReviewed text en http://eprints.utem.edu.my/id/eprint/15164/1/Various%20doping%20concentration%20effect%20on%20silicon%20on%20insulator%20%28SOI%29%20phase%20modulator235.pdf Mardiana, Bidin and Hazura, Haroon and Hanim, Abdul Razak and Sahbudin, Saari and Huda, Abdullah (2010) Various doping concentration effect on silicon on insulator (SOI) phase modulator. In: 2010 International Conference on Photonics (ICP), 5-7 July 2010, Langkawi, Kedah. (Submitted) |
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TK Electrical engineering. Electronics Nuclear engineering Mardiana, Bidin Hazura, Haroon Hanim, Abdul Razak Sahbudin, Saari Huda, Abdullah Various doping concentration effect on silicon on insulator (SOI) phase modulator |
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This paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode structure. The electrical device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The least doping concentration of p+ and n+ region produces the least change of refractive index of the modulator. Meanwhile, results show that by increasing the doping concentrations, the value of Iπ decreases. This means that the phase modulator performance is better with increased doping concentrations. |
format |
Conference or Workshop Item |
author |
Mardiana, Bidin Hazura, Haroon Hanim, Abdul Razak Sahbudin, Saari Huda, Abdullah |
author_facet |
Mardiana, Bidin Hazura, Haroon Hanim, Abdul Razak Sahbudin, Saari Huda, Abdullah |
author_sort |
Mardiana, Bidin |
title |
Various doping concentration effect on silicon on insulator (SOI) phase modulator |
title_short |
Various doping concentration effect on silicon on insulator (SOI) phase modulator |
title_full |
Various doping concentration effect on silicon on insulator (SOI) phase modulator |
title_fullStr |
Various doping concentration effect on silicon on insulator (SOI) phase modulator |
title_full_unstemmed |
Various doping concentration effect on silicon on insulator (SOI) phase modulator |
title_sort |
various doping concentration effect on silicon on insulator (soi) phase modulator |
publishDate |
2010 |
url |
http://eprints.utem.edu.my/id/eprint/15164/1/Various%20doping%20concentration%20effect%20on%20silicon%20on%20insulator%20%28SOI%29%20phase%20modulator235.pdf http://eprints.utem.edu.my/id/eprint/15164/ |
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1665905634355183616 |
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13.211869 |