Compatibility Analysis of Silicon Nitride and Silicon Dioxide on HCI induced LDD MOSFET
Hot-carrier-injection (HCI) is one of important reliability issue under short-channel effect in modern MOSFET devices especially in nano-scaled CMOS technology circuits. The effect of the hot carrier can be reduced by introducing Lightly-Doped-Drain (LDD) structure on the device. The objective of th...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American-Eurasian Networks for Scientific Informations (AENSI)
2014
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/14003/1/Compatibility_Analysis_of_Silicon_Nitride_and_Silicon_Dioxide_on_HCI_induced_LDD_MOSFET.pdf http://eprints.utem.edu.my/id/eprint/14003/ http://www.ajbasweb.com/ |
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