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Analyses for various doping structures of SOI-based optical phasemodulator using free carrier dispersion effectB

tThis paper highlights the study on various structure of silicon-on-insulator (SOI) optical phase modula-tors based on free carrier dispersion effect. The proposed modulators employ the forward biased P-I-Ndiode structure integrated in the waveguide and will be working at 1.55 m optical telecommunic...

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Main Authors: Mardiana, Bidin, Sahbudin, Saari, Menon, P.S, Haroon, Hazura, Hanim, Abdul Razak, Arsad, N., Abdullah, H.
Format: Article
Language:English
Published: Elsevier GmbH 2014
Subjects:
TA Engineering (General). Civil engineering (General)
Online Access:http://eprints.utem.edu.my/id/eprint/13089/1/optik_mar.pdf
http://eprints.utem.edu.my/id/eprint/13089/
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spelling my.utem.eprints.130892015-05-28T04:29:39Z http://eprints.utem.edu.my/id/eprint/13089/ Analyses for various doping structures of SOI-based optical phasemodulator using free carrier dispersion effectB Mardiana, Bidin Sahbudin, Saari Menon, P.S Haroon, Hazura Hanim, Abdul Razak Arsad, N. Abdullah, H. TA Engineering (General). Civil engineering (General) tThis paper highlights the study on various structure of silicon-on-insulator (SOI) optical phase modula-tors based on free carrier dispersion effect. The proposed modulators employ the forward biased P-I-Ndiode structure integrated in the waveguide and will be working at 1.55 m optical telecommunicationswavelength. Three kinds of structure are compared systematically where the p+ and n+ doping positionsare varied. The modeling and characterization of the SOI phase modulators was carried out by 3D numer-ical simulation package. Our results show that the position of doping regions have a great influences tothe device performance. It was discovered that the best structure in this work demonstrated modulationefficiency of 0.015 V cm with a length of 155 m. Elsevier GmbH 2014 Article PeerReviewed application/pdf en http://eprints.utem.edu.my/id/eprint/13089/1/optik_mar.pdf Mardiana, Bidin and Sahbudin, Saari and Menon, P.S and Haroon, Hazura and Hanim, Abdul Razak and Arsad, N. and Abdullah, H. (2014) Analyses for various doping structures of SOI-based optical phasemodulator using free carrier dispersion effectB. Optik, 125. pp. 1800-1803. ISSN 0030-4026
institution Universiti Teknikal Malaysia Melaka
building UTEM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknikal Malaysia Melaka
content_source UTEM Institutional Repository
url_provider http://eprints.utem.edu.my/
language English
topic TA Engineering (General). Civil engineering (General)
spellingShingle TA Engineering (General). Civil engineering (General)
Mardiana, Bidin
Sahbudin, Saari
Menon, P.S
Haroon, Hazura
Hanim, Abdul Razak
Arsad, N.
Abdullah, H.
Analyses for various doping structures of SOI-based optical phasemodulator using free carrier dispersion effectB
description tThis paper highlights the study on various structure of silicon-on-insulator (SOI) optical phase modula-tors based on free carrier dispersion effect. The proposed modulators employ the forward biased P-I-Ndiode structure integrated in the waveguide and will be working at 1.55 m optical telecommunicationswavelength. Three kinds of structure are compared systematically where the p+ and n+ doping positionsare varied. The modeling and characterization of the SOI phase modulators was carried out by 3D numer-ical simulation package. Our results show that the position of doping regions have a great influences tothe device performance. It was discovered that the best structure in this work demonstrated modulationefficiency of 0.015 V cm with a length of 155 m.
format Article
author Mardiana, Bidin
Sahbudin, Saari
Menon, P.S
Haroon, Hazura
Hanim, Abdul Razak
Arsad, N.
Abdullah, H.
author_facet Mardiana, Bidin
Sahbudin, Saari
Menon, P.S
Haroon, Hazura
Hanim, Abdul Razak
Arsad, N.
Abdullah, H.
author_sort Mardiana, Bidin
title Analyses for various doping structures of SOI-based optical phasemodulator using free carrier dispersion effectB
title_short Analyses for various doping structures of SOI-based optical phasemodulator using free carrier dispersion effectB
title_full Analyses for various doping structures of SOI-based optical phasemodulator using free carrier dispersion effectB
title_fullStr Analyses for various doping structures of SOI-based optical phasemodulator using free carrier dispersion effectB
title_full_unstemmed Analyses for various doping structures of SOI-based optical phasemodulator using free carrier dispersion effectB
title_sort analyses for various doping structures of soi-based optical phasemodulator using free carrier dispersion effectb
publisher Elsevier GmbH
publishDate 2014
url http://eprints.utem.edu.my/id/eprint/13089/1/optik_mar.pdf
http://eprints.utem.edu.my/id/eprint/13089/
_version_ 1665905528848515072
score 13.211869

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