Cover Image

Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT)

InGaN/GaN multiquantum wells (MQWs) grown on 2-inch c-plane patterned sapphire substrate using metal-organic chemical vapor deposition was characterized by secondary ion mass spectrometry and atom probe tomography. The average In mole fraction by APT was found to be around 16% in the InGaN well whic...

Full description

Saved in:
Bibliographic Details
Main Authors: Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd, Zainal, Norzaini, Ng, Sha Shiong, Hassan, Zainuriah
Format: Conference or Workshop Item
Language:English
Published: 2020
Subjects:
QC1-999 Physics
Online Access:http://eprints.usm.my/48952/1/MNRG_ZH02.pdf
http://eprints.usm.my/48952/
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.usm.eprints.48952
record_format eprints
spelling my.usm.eprints.48952 http://eprints.usm.my/48952/ Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT) Ahmad, Mohd Anas Hamzah, Nur Atiqah Asri, Rahil Izzati Mohd Zainal, Norzaini Ng, Sha Shiong Hassan, Zainuriah QC1-999 Physics InGaN/GaN multiquantum wells (MQWs) grown on 2-inch c-plane patterned sapphire substrate using metal-organic chemical vapor deposition was characterized by secondary ion mass spectrometry and atom probe tomography. The average In mole fraction by APT was found to be around 16% in the InGaN well which is consistent with SIMS analysis. SIMS analysis was also performed to analyze the In distribution in the InGaN well layer, where the results were found to be nonuniform in the InGaN active layer, as opposed to the results obtained from APT measurement. Further from SIMS measurement, the upper interfaces of the QWs were slightly more diffused than the lower interfaces. Meanwhile, APT measurement showed In clustering or In rich regions based on different color distributions, indicating different In concentration. The results of APT and SIMS for average In mole fracrtion were validated by XRD measurement. 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48952/1/MNRG_ZH02.pdf Ahmad, Mohd Anas and Hamzah, Nur Atiqah and Asri, Rahil Izzati Mohd and Zainal, Norzaini and Ng, Sha Shiong and Hassan, Zainuriah (2020) Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT). In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020).
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1-999 Physics
spellingShingle QC1-999 Physics
Ahmad, Mohd Anas
Hamzah, Nur Atiqah
Asri, Rahil Izzati Mohd
Zainal, Norzaini
Ng, Sha Shiong
Hassan, Zainuriah
Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT)
description InGaN/GaN multiquantum wells (MQWs) grown on 2-inch c-plane patterned sapphire substrate using metal-organic chemical vapor deposition was characterized by secondary ion mass spectrometry and atom probe tomography. The average In mole fraction by APT was found to be around 16% in the InGaN well which is consistent with SIMS analysis. SIMS analysis was also performed to analyze the In distribution in the InGaN well layer, where the results were found to be nonuniform in the InGaN active layer, as opposed to the results obtained from APT measurement. Further from SIMS measurement, the upper interfaces of the QWs were slightly more diffused than the lower interfaces. Meanwhile, APT measurement showed In clustering or In rich regions based on different color distributions, indicating different In concentration. The results of APT and SIMS for average In mole fracrtion were validated by XRD measurement.
format Conference or Workshop Item
author Ahmad, Mohd Anas
Hamzah, Nur Atiqah
Asri, Rahil Izzati Mohd
Zainal, Norzaini
Ng, Sha Shiong
Hassan, Zainuriah
author_facet Ahmad, Mohd Anas
Hamzah, Nur Atiqah
Asri, Rahil Izzati Mohd
Zainal, Norzaini
Ng, Sha Shiong
Hassan, Zainuriah
author_sort Ahmad, Mohd Anas
title Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT)
title_short Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT)
title_full Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT)
title_fullStr Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT)
title_full_unstemmed Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT)
title_sort inhomogeneity of an ingan based blue led studied by secondary ion mass spectrometry (sims) and atom probe tomography (apt)
publishDate 2020
url http://eprints.usm.my/48952/1/MNRG_ZH02.pdf
http://eprints.usm.my/48952/
_version_ 1698697774527152128
score 13.211869

Similar Items