Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT)
InGaN/GaN multiquantum wells (MQWs) grown on 2-inch c-plane patterned sapphire substrate using metal-organic chemical vapor deposition was characterized by secondary ion mass spectrometry and atom probe tomography. The average In mole fraction by APT was found to be around 16% in the InGaN well whic...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/48952/1/MNRG_ZH02.pdf http://eprints.usm.my/48952/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|