Effects Of Post-Deposition Annealing In Oxygen Ambient Of Rf Magnetron Sputtered Ga2O3 Thin Film
In this work, the gallium oxide (Ga2O3) thin films were deposited on silicon substrate using radio frequency (RF) magnetron sputtering and these Ga2O3 thin films were subjected to post-deposition annealing in oxygen ambient at different temperatures of 400, 600, 800, and 1000℃ for 60 minutes. The st...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48944/1/MNRG_QHJ01.pdf http://eprints.usm.my/48944/ |
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