Effects Of Post-Deposition Annealing Time In Forming Gas Ambient On Y2O3 Films Deposited On Silicon Substrate
The effects of post-deposition annealing (PDA) time (15, 30, and 45 min) at 800˚C in forming gas (95% N2-5% H2) ambient was systematically studied for RF-magnetron sputtered Y2O3 films on n-type Si(100) substrate. X-ray diffraction characterization has revealed the detection of Y2O3 phase oriented i...
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| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48845/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20113.pdf http://eprints.usm.my/48845/ |
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