Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN
Poor light extraction due to total internal reflection (TIR) phenomenon has become a major problem in InGaN/GaN light-emitting diode (LED) [1-2]. Surface texturing by photoelectrochemical (PEC) etching gives access to more than 70% improvement in light extraction as reported in [3]. In this work, an...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48905/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2099.pdf http://eprints.usm.my/48905/ |
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