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Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN

Poor light extraction due to total internal reflection (TIR) phenomenon has become a major problem in InGaN/GaN light-emitting diode (LED) [1-2]. Surface texturing by photoelectrochemical (PEC) etching gives access to more than 70% improvement in light extraction as reported in [3]. In this work, an...

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Main Authors: Ibrahim, N., Ikram Md Taib, M., Waheeda, S. N., Alias, E. A., Zainal, N.
Format: Conference or Workshop Item
Language:English
Published: 2019
Subjects:
QC1-999 Physics
Online Access:http://eprints.usm.my/48905/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2099.pdf
http://eprints.usm.my/48905/
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spelling my.usm.eprints.48905 http://eprints.usm.my/48905/ Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN Ibrahim, N. Ikram Md Taib, M. Waheeda, S. N. Alias, E. A. Zainal, N. QC1-999 Physics Poor light extraction due to total internal reflection (TIR) phenomenon has become a major problem in InGaN/GaN light-emitting diode (LED) [1-2]. Surface texturing by photoelectrochemical (PEC) etching gives access to more than 70% improvement in light extraction as reported in [3]. In this work, an electrode-less photo-assisted etching is demonstrated on Ga-polar face of n-type and p-type GaN layers. Two type of etchant solutions, H3PO4 with KOH and H3PO4 with HNO3 were used and the surface morphology of all samples were measured using scanning electron microscopy (SEM). Hexagonal pit on the surface of all samples were observed. Interestingly, the pits were formed in various uniformity, density and size depending on the type of solution. Surface roughness of etch samples is improved after etching as measured using atomic force microscopy (AFM). 2019-04-30 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48905/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2099.pdf Ibrahim, N. and Ikram Md Taib, M. and Waheeda, S. N. and Alias, E. A. and Zainal, N. (2019) Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN. In: International Conference On Semiconductor Materials Technology.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1-999 Physics
spellingShingle QC1-999 Physics
Ibrahim, N.
Ikram Md Taib, M.
Waheeda, S. N.
Alias, E. A.
Zainal, N.
Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN
description Poor light extraction due to total internal reflection (TIR) phenomenon has become a major problem in InGaN/GaN light-emitting diode (LED) [1-2]. Surface texturing by photoelectrochemical (PEC) etching gives access to more than 70% improvement in light extraction as reported in [3]. In this work, an electrode-less photo-assisted etching is demonstrated on Ga-polar face of n-type and p-type GaN layers. Two type of etchant solutions, H3PO4 with KOH and H3PO4 with HNO3 were used and the surface morphology of all samples were measured using scanning electron microscopy (SEM). Hexagonal pit on the surface of all samples were observed. Interestingly, the pits were formed in various uniformity, density and size depending on the type of solution. Surface roughness of etch samples is improved after etching as measured using atomic force microscopy (AFM).
format Conference or Workshop Item
author Ibrahim, N.
Ikram Md Taib, M.
Waheeda, S. N.
Alias, E. A.
Zainal, N.
author_facet Ibrahim, N.
Ikram Md Taib, M.
Waheeda, S. N.
Alias, E. A.
Zainal, N.
author_sort Ibrahim, N.
title Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN
title_short Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN
title_full Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN
title_fullStr Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN
title_full_unstemmed Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN
title_sort electrode-less photo-assisted etching of p-type and n-type gan
publishDate 2019
url http://eprints.usm.my/48905/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2099.pdf
http://eprints.usm.my/48905/
_version_ 1698697768190607360
score 13.244368

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