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Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates

The aim of this project is to study the growth and characterization of nanocrystalline indium nitride (InN) on silicon (Si) substrates by means of various non-contact and non-destructive characterization tools. These include the scanning electron microscopy (SEM), energy dispersive X-ray (EDX)...

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Main Author: Amirhoseiny, Maryam
Format: Thesis
Language:English
Published: 2013
Subjects:
QC1 Physics (General)
Online Access:http://eprints.usm.my/43801/1/Maryam%20Amirhoseiny24.pdf
http://eprints.usm.my/43801/
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spelling my.usm.eprints.43801 http://eprints.usm.my/43801/ Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates Amirhoseiny, Maryam QC1 Physics (General) The aim of this project is to study the growth and characterization of nanocrystalline indium nitride (InN) on silicon (Si) substrates by means of various non-contact and non-destructive characterization tools. These include the scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, atomic force microscopy (AFM), and X-ray diffraction (XRD) for structural characterization, and Fourier transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy, and photoluminescence (PL) spectroscopy for optical characterization. Initial works on the structural and optical characterization of the nanocrystalline InN grown on anisotropic (110) orientation of sillicon (Si) substrates have been carried out. Studies are, however, focused on optimizing the deposition conditions for growing nanocrystalline InN by radio frequency (RF) sputtering method. All deposited films obtained under different deposition conditions were slightly nitrogen-rich, but increasing the RF power provided more InN compounds in stoichiometric form. XRD results revealed wurtzite nanocrystalline InN films with a (101) preferred growth orientation for all deposited films. The strong PL peak was observed in the energy of 1.9 eV at room temperature. This higher value of the bandgap is due to the Moss–Burstein shift effect. 2013-09 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/43801/1/Maryam%20Amirhoseiny24.pdf Amirhoseiny, Maryam (2013) Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates. PhD thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Amirhoseiny, Maryam
Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates
description The aim of this project is to study the growth and characterization of nanocrystalline indium nitride (InN) on silicon (Si) substrates by means of various non-contact and non-destructive characterization tools. These include the scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, atomic force microscopy (AFM), and X-ray diffraction (XRD) for structural characterization, and Fourier transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy, and photoluminescence (PL) spectroscopy for optical characterization. Initial works on the structural and optical characterization of the nanocrystalline InN grown on anisotropic (110) orientation of sillicon (Si) substrates have been carried out. Studies are, however, focused on optimizing the deposition conditions for growing nanocrystalline InN by radio frequency (RF) sputtering method. All deposited films obtained under different deposition conditions were slightly nitrogen-rich, but increasing the RF power provided more InN compounds in stoichiometric form. XRD results revealed wurtzite nanocrystalline InN films with a (101) preferred growth orientation for all deposited films. The strong PL peak was observed in the energy of 1.9 eV at room temperature. This higher value of the bandgap is due to the Moss–Burstein shift effect.
format Thesis
author Amirhoseiny, Maryam
author_facet Amirhoseiny, Maryam
author_sort Amirhoseiny, Maryam
title Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates
title_short Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates
title_full Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates
title_fullStr Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates
title_full_unstemmed Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates
title_sort structural and optical properties of sputtered nanocrystalline indium nitride on silicon substrates
publishDate 2013
url http://eprints.usm.my/43801/1/Maryam%20Amirhoseiny24.pdf
http://eprints.usm.my/43801/
_version_ 1643710839465705472
score 13.211869

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