Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates
The aim of this project is to study the growth and characterization of nanocrystalline indium nitride (InN) on silicon (Si) substrates by means of various non-contact and non-destructive characterization tools. These include the scanning electron microscopy (SEM), energy dispersive X-ray (EDX)...
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | http://eprints.usm.my/43801/1/Maryam%20Amirhoseiny24.pdf http://eprints.usm.my/43801/ |
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| Summary: | The aim of this project is to study the growth and characterization of
nanocrystalline indium nitride (InN) on silicon (Si) substrates by means of various
non-contact and non-destructive characterization tools. These include the scanning
electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, atomic force
microscopy (AFM), and X-ray diffraction (XRD) for structural characterization, and
Fourier transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy, and
photoluminescence (PL) spectroscopy for optical characterization.
Initial works on the structural and optical characterization of the
nanocrystalline InN grown on anisotropic (110) orientation of sillicon (Si) substrates
have been carried out. Studies are, however, focused on optimizing the deposition
conditions for growing nanocrystalline InN by radio frequency (RF) sputtering
method. All deposited films obtained under different deposition conditions were
slightly nitrogen-rich, but increasing the RF power provided more InN compounds in
stoichiometric form. XRD results revealed wurtzite nanocrystalline InN films with a
(101) preferred growth orientation for all deposited films. The strong PL peak was
observed in the energy of 1.9 eV at room temperature. This higher value of the
bandgap is due to the Moss–Burstein shift effect. |
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