Fabrication of Lateral Polysilicon Gap of Less than 50nm Using Conventional Lithography
We report a thermal oxidation process for the fabrication of nanogaps of less than 50 nmin dimension.Nanogaps of this dimension are necessary to eliminate contributions from double-layer capacitance in the dielectric detection of protein or nucleic acid. The method combines conventional photolitho...
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| Main Authors: | , , , , |
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| 格式: | Article |
| 語言: | English |
| 出版: |
Hindawi Publishing Corporation
2011
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| 主題: | |
| 在線閱讀: | http://eprints.usm.my/39098/1/Fabrication_of_Lateral_Polysilicon_Gap_of_Less_than_50%E2%80%89nm_Using_Conventional_Lithography.pdf http://eprints.usm.my/39098/ https://doi.org/10.1155/2011/250350 |
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