Cover Image

Numerical analysis of In2S3 layer thickness, band gap and doping density for effective performance of a CIGS solar cell using SCAPS

The effect of indium sulfide buffer layer’s geometrical and electro-optical properties on the Copper–Indium–Gallium–diSelenide solar cell performance using numerical simulation is investigated. The numerical simulation software used is a solar cell capacitance simulator in (SCAPS). The innermost imp...

Full description

Saved in:
Bibliographic Details
Main Authors: Khoshsirat, Nima, Md Yunus, Nurul Amziah
Format: Article
Language:English
Published: Springer Verlag 2016
Online Access:http://psasir.upm.edu.my/id/eprint/53400/1/Numerical%20analysis%20of%20In2S3%20layer%20thickness%2C%20band%20gap%20and%20doping%20density%20for%20effective%20performance%20of%20a%20CIGS%20solar%20cell%20using%20SCAPS.pdf
http://psasir.upm.edu.my/id/eprint/53400/
https://link.springer.com/article/10.1007/s11664-016-4744-6
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.upm.eprints.53400
record_format eprints
spelling my.upm.eprints.534002017-10-26T10:21:14Z http://psasir.upm.edu.my/id/eprint/53400/ Numerical analysis of In2S3 layer thickness, band gap and doping density for effective performance of a CIGS solar cell using SCAPS Khoshsirat, Nima Md Yunus, Nurul Amziah The effect of indium sulfide buffer layer’s geometrical and electro-optical properties on the Copper–Indium–Gallium–diSelenide solar cell performance using numerical simulation is investigated. The numerical simulation software used is a solar cell capacitance simulator in (SCAPS). The innermost impacts of buffer layer thickness, band gap, and doping density on the cells output parameters such as open circuit voltage, short circuit current density, fill factor, and the efficiency were extensively simulated. The results show that the cell efficiency, which was innovatively illustrated as a two-dimensional contour plot function, depends on the buffer layer electron affinity and doping density by keeping all the other parameters at a steady state. The analysis, which was made from this numerical simulation, has revealed that the optimum electron affinity is to be 4.25 ± 0.2 eV and donor density of the buffer layer is over 1×1017 cm−3. It is also shown that the cell with an optimum thin buffer layer has higher performance and efficiency due to the lower optical absorption of the buffer layer. Springer Verlag 2016-11 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/53400/1/Numerical%20analysis%20of%20In2S3%20layer%20thickness%2C%20band%20gap%20and%20doping%20density%20for%20effective%20performance%20of%20a%20CIGS%20solar%20cell%20using%20SCAPS.pdf Khoshsirat, Nima and Md Yunus, Nurul Amziah (2016) Numerical analysis of In2S3 layer thickness, band gap and doping density for effective performance of a CIGS solar cell using SCAPS. Journal of Electronic Materials, 45 (11). pp. 5721-5727. ISSN 0361-5235; ESSN: 1543-186X https://link.springer.com/article/10.1007/s11664-016-4744-6 10.1007/s11664-016-4744-6
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
description The effect of indium sulfide buffer layer’s geometrical and electro-optical properties on the Copper–Indium–Gallium–diSelenide solar cell performance using numerical simulation is investigated. The numerical simulation software used is a solar cell capacitance simulator in (SCAPS). The innermost impacts of buffer layer thickness, band gap, and doping density on the cells output parameters such as open circuit voltage, short circuit current density, fill factor, and the efficiency were extensively simulated. The results show that the cell efficiency, which was innovatively illustrated as a two-dimensional contour plot function, depends on the buffer layer electron affinity and doping density by keeping all the other parameters at a steady state. The analysis, which was made from this numerical simulation, has revealed that the optimum electron affinity is to be 4.25 ± 0.2 eV and donor density of the buffer layer is over 1×1017 cm−3. It is also shown that the cell with an optimum thin buffer layer has higher performance and efficiency due to the lower optical absorption of the buffer layer.
format Article
author Khoshsirat, Nima
Md Yunus, Nurul Amziah
spellingShingle Khoshsirat, Nima
Md Yunus, Nurul Amziah
Numerical analysis of In2S3 layer thickness, band gap and doping density for effective performance of a CIGS solar cell using SCAPS
author_facet Khoshsirat, Nima
Md Yunus, Nurul Amziah
author_sort Khoshsirat, Nima
title Numerical analysis of In2S3 layer thickness, band gap and doping density for effective performance of a CIGS solar cell using SCAPS
title_short Numerical analysis of In2S3 layer thickness, band gap and doping density for effective performance of a CIGS solar cell using SCAPS
title_full Numerical analysis of In2S3 layer thickness, band gap and doping density for effective performance of a CIGS solar cell using SCAPS
title_fullStr Numerical analysis of In2S3 layer thickness, band gap and doping density for effective performance of a CIGS solar cell using SCAPS
title_full_unstemmed Numerical analysis of In2S3 layer thickness, band gap and doping density for effective performance of a CIGS solar cell using SCAPS
title_sort numerical analysis of in2s3 layer thickness, band gap and doping density for effective performance of a cigs solar cell using scaps
publisher Springer Verlag
publishDate 2016
url http://psasir.upm.edu.my/id/eprint/53400/1/Numerical%20analysis%20of%20In2S3%20layer%20thickness%2C%20band%20gap%20and%20doping%20density%20for%20effective%20performance%20of%20a%20CIGS%20solar%20cell%20using%20SCAPS.pdf
http://psasir.upm.edu.my/id/eprint/53400/
https://link.springer.com/article/10.1007/s11664-016-4744-6
_version_ 1643835385222004736
score 13.211869

Similar Items