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Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature

The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600°C) on physical properties of In2−xFexO3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In2O3 phase structure when annealed in hydrogen at 300–500°C, howeve...

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Main Authors: Hussein Baqiah, Hussein Abdullah, Ibrahim, Noor Baa'yah, Shaari, Abdul Halim, Chen, Soo Kien, Lim, Kean Pah, Awang Kechik, Mohd Mustafa
Format: Article
Language:English
Published: Elsevier 2016
Online Access:http://psasir.upm.edu.my/id/eprint/47408/1/Physical%20properties%20of%20Fe%20doped%20In2O3%20magnetic%20semiconductor%20annealed%20in%20hydrogen%20at%20different%20temperature.pdf
http://psasir.upm.edu.my/id/eprint/47408/
http://www.sciencedirect.com/science/article/pii/S0304885315306491
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spelling my.upm.eprints.474082016-05-19T07:13:22Z http://psasir.upm.edu.my/id/eprint/47408/ Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature Hussein Baqiah, Hussein Abdullah Ibrahim, Noor Baa'yah Shaari, Abdul Halim Chen, Soo Kien Lim, Kean Pah Awang Kechik, Mohd Mustafa The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600°C) on physical properties of In2−xFexO3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In2O3 phase structure when annealed in hydrogen at 300–500°C, however when annealed in hydrogen at 600°C the film has a mixed phase structure of In2O3 and In phases. The electrical measurements show that the carrier concentrations of the films decrease with the increase of hydrogen-annealing temperature in the range 300–500°C. The optical band gap of the films decreases with increasing hydrogen-annealing temperatures. The saturation magnetisation, Ms, and coercivity of films increase with the increment of hydrogen annealing temperature. The film annealed at 300°C has the lowest resistivity, ρ=0.03 Ω cm, and the highest carrier concentrations, n=6.8×1019 cm−3, while film annealed at 500°C has both good electrical (ρ=0.05 Ω.cm and n=2.2×1019 cm−3) and magnetic properties, Ms=21 emu/cm-3. Elsevier 2016 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/47408/1/Physical%20properties%20of%20Fe%20doped%20In2O3%20magnetic%20semiconductor%20annealed%20in%20hydrogen%20at%20different%20temperature.pdf Hussein Baqiah, Hussein Abdullah and Ibrahim, Noor Baa'yah and Shaari, Abdul Halim and Chen, Soo Kien and Lim, Kean Pah and Awang Kechik, Mohd Mustafa (2016) Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature. Journal of Magnetism and Magnetic Materials, 401. pp. 102-107. ISSN 0304-8853; ESSN: 1873-4766 http://www.sciencedirect.com/science/article/pii/S0304885315306491 10.1016/j.jmmm.2015.10.013
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
description The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600°C) on physical properties of In2−xFexO3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In2O3 phase structure when annealed in hydrogen at 300–500°C, however when annealed in hydrogen at 600°C the film has a mixed phase structure of In2O3 and In phases. The electrical measurements show that the carrier concentrations of the films decrease with the increase of hydrogen-annealing temperature in the range 300–500°C. The optical band gap of the films decreases with increasing hydrogen-annealing temperatures. The saturation magnetisation, Ms, and coercivity of films increase with the increment of hydrogen annealing temperature. The film annealed at 300°C has the lowest resistivity, ρ=0.03 Ω cm, and the highest carrier concentrations, n=6.8×1019 cm−3, while film annealed at 500°C has both good electrical (ρ=0.05 Ω.cm and n=2.2×1019 cm−3) and magnetic properties, Ms=21 emu/cm-3.
format Article
author Hussein Baqiah, Hussein Abdullah
Ibrahim, Noor Baa'yah
Shaari, Abdul Halim
Chen, Soo Kien
Lim, Kean Pah
Awang Kechik, Mohd Mustafa
spellingShingle Hussein Baqiah, Hussein Abdullah
Ibrahim, Noor Baa'yah
Shaari, Abdul Halim
Chen, Soo Kien
Lim, Kean Pah
Awang Kechik, Mohd Mustafa
Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature
author_facet Hussein Baqiah, Hussein Abdullah
Ibrahim, Noor Baa'yah
Shaari, Abdul Halim
Chen, Soo Kien
Lim, Kean Pah
Awang Kechik, Mohd Mustafa
author_sort Hussein Baqiah, Hussein Abdullah
title Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature
title_short Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature
title_full Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature
title_fullStr Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature
title_full_unstemmed Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature
title_sort physical properties of fe doped in2o3 magnetic semiconductor annealed in hydrogen at different temperature
publisher Elsevier
publishDate 2016
url http://psasir.upm.edu.my/id/eprint/47408/1/Physical%20properties%20of%20Fe%20doped%20In2O3%20magnetic%20semiconductor%20annealed%20in%20hydrogen%20at%20different%20temperature.pdf
http://psasir.upm.edu.my/id/eprint/47408/
http://www.sciencedirect.com/science/article/pii/S0304885315306491
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score 13.211869

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