Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature
The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600°C) on physical properties of In2−xFexO3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In2O3 phase structure when annealed in hydrogen at 300–500°C, howeve...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2016
|
| Online Access: | http://psasir.upm.edu.my/id/eprint/47408/1/Physical%20properties%20of%20Fe%20doped%20In2O3%20magnetic%20semiconductor%20annealed%20in%20hydrogen%20at%20different%20temperature.pdf http://psasir.upm.edu.my/id/eprint/47408/ http://www.sciencedirect.com/science/article/pii/S0304885315306491 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600°C) on physical properties of In2−xFexO3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In2O3 phase structure when annealed in hydrogen at 300–500°C, however when annealed in hydrogen at 600°C the film has a mixed phase structure of In2O3 and In phases. The electrical measurements show that the carrier concentrations of the films decrease with the increase of hydrogen-annealing temperature in the range 300–500°C. The optical band gap of the films decreases with increasing hydrogen-annealing temperatures. The saturation magnetisation, Ms, and coercivity of films increase with the increment of hydrogen annealing temperature. The film annealed at 300°C has the lowest resistivity, ρ=0.03 Ω cm, and the highest carrier concentrations, n=6.8×1019 cm−3, while film annealed at 500°C has both good electrical (ρ=0.05 Ω.cm and n=2.2×1019 cm−3) and magnetic properties, Ms=21 emu/cm-3. |
|---|