InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes

Avalanche gain and excess noise characteristics of InAs APDs showed that high gain can be achieved with excess noise factor F∼1.5 across temperatures ranging from 77 to 298K. © 2011 IEEE.

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Main Authors: Ker, P.J., Marshall, A., Gomes, R., David, J.P., Ng, J.S., Tan, C.H.
Format: Conference Proceeding
Language:en_US
Published: 2017
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spelling my.uniten.dspace-59902018-02-07T08:17:43Z InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes Ker, P.J. Marshall, A. Gomes, R. David, J.P. Ng, J.S. Tan, C.H. Avalanche gain and excess noise characteristics of InAs APDs showed that high gain can be achieved with excess noise factor F∼1.5 across temperatures ranging from 77 to 298K. © 2011 IEEE. 2017-12-08T07:48:16Z 2017-12-08T07:48:16Z 2011 Conference Proceeding 10.1109/PHO.2011.6110533 en_US InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. In IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp. 276-277). [6110533]
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
language en_US
description Avalanche gain and excess noise characteristics of InAs APDs showed that high gain can be achieved with excess noise factor F∼1.5 across temperatures ranging from 77 to 298K. © 2011 IEEE.
format Conference Proceeding
author Ker, P.J.
Marshall, A.
Gomes, R.
David, J.P.
Ng, J.S.
Tan, C.H.
spellingShingle Ker, P.J.
Marshall, A.
Gomes, R.
David, J.P.
Ng, J.S.
Tan, C.H.
InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes
author_facet Ker, P.J.
Marshall, A.
Gomes, R.
David, J.P.
Ng, J.S.
Tan, C.H.
author_sort Ker, P.J.
title InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes
title_short InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes
title_full InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes
title_fullStr InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes
title_full_unstemmed InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes
title_sort inas electron-avalanche photodiodes: from leaky diodes to extremely low noise avalanche photodiodes
publishDate 2017
_version_ 1644493816763252736
score 13.222552