Temperature dependence of impact ionization in InAs
An Analytical Band Monte Carlo model was used to investigate the temperature dependence of impact ionization in InAs. The model produced an excellent agreement with experimental data for both avalanche gain and excess noise factors at all temperatures modeled. The gain exhibits a positive temperatur...
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主要な著者: | Sandall, I.C., Ng, J.S., Shiyu, X., Ker, P.J., Tan, C.H. |
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フォーマット: | 論文 |
言語: | en_US |
出版事項: |
2017
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