Cover Image

Space-Charge-Limited Dark Injection (SCL DI) transient measurements

It is not an easy task to probe the mobility of nanoscale thin layers without using expensive and sophisticated equipments such as Time-of-flight photocurrent charge carrier mobility measurement. We present here a powerful yet cost-effective technique, namely the Space-Charge-Limited Dark Injection...

Full description

Saved in:
Bibliographic Details
Main Authors: Yap, B.K., Koh, S.P., Tiong, S.K., Ong, C.N.
Format: Conference Paper
Language:en_US
Published: 2017
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.uniten.dspace-5834
record_format dspace
spelling my.uniten.dspace-58342018-01-14T23:47:59Z Space-Charge-Limited Dark Injection (SCL DI) transient measurements Yap, B.K. Koh, S.P. Tiong, S.K. Ong, C.N. It is not an easy task to probe the mobility of nanoscale thin layers without using expensive and sophisticated equipments such as Time-of-flight photocurrent charge carrier mobility measurement. We present here a powerful yet cost-effective technique, namely the Space-Charge-Limited Dark Injection (SCL DI) Transient Measurement that allows us to confirm an ohmic injecting interface, to determine the mobility values of the bulk materials and to study the injection efficiency of the interfaces of the semiconductor materials. © 2010 IEEE. 2017-12-08T07:26:35Z 2017-12-08T07:26:35Z 2010 Conference Paper 10.1109/SMELEC.2010.5549542 en_US IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE 2010, Article number 5549542, Pages 192-194
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
language en_US
description It is not an easy task to probe the mobility of nanoscale thin layers without using expensive and sophisticated equipments such as Time-of-flight photocurrent charge carrier mobility measurement. We present here a powerful yet cost-effective technique, namely the Space-Charge-Limited Dark Injection (SCL DI) Transient Measurement that allows us to confirm an ohmic injecting interface, to determine the mobility values of the bulk materials and to study the injection efficiency of the interfaces of the semiconductor materials. © 2010 IEEE.
format Conference Paper
author Yap, B.K.
Koh, S.P.
Tiong, S.K.
Ong, C.N.
spellingShingle Yap, B.K.
Koh, S.P.
Tiong, S.K.
Ong, C.N.
Space-Charge-Limited Dark Injection (SCL DI) transient measurements
author_facet Yap, B.K.
Koh, S.P.
Tiong, S.K.
Ong, C.N.
author_sort Yap, B.K.
title Space-Charge-Limited Dark Injection (SCL DI) transient measurements
title_short Space-Charge-Limited Dark Injection (SCL DI) transient measurements
title_full Space-Charge-Limited Dark Injection (SCL DI) transient measurements
title_fullStr Space-Charge-Limited Dark Injection (SCL DI) transient measurements
title_full_unstemmed Space-Charge-Limited Dark Injection (SCL DI) transient measurements
title_sort space-charge-limited dark injection (scl di) transient measurements
publishDate 2017
_version_ 1644493787372716032
score 13.222552

Similar Items