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Characterisation of polysilicon gate microstructures for 0.5 μm CMOS devices using transmission electron microscopy and atomic force microscopy images

This paper considers two different doping methods and compares their impact on the polysilicon's microstructures when doped with phosphorous by using the transmission electron microscopy (TEM) and atomic force microscopy (AFM) images. The two doping methods considered are the in situ (or also k...

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主要な著者:	Ahmad, I., Omar, A., Hussain, A., Mikdad, A.
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出版事項:	2017
オンライン･アクセス:	http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5335
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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