Characterisation of polysilicon gate microstructures for 0.5 μm CMOS devices using transmission electron microscopy and atomic force microscopy images
This paper considers two different doping methods and compares their impact on the polysilicon's microstructures when doped with phosphorous by using the transmission electron microscopy (TEM) and atomic force microscopy (AFM) images. The two doping methods considered are the in situ (or also k...
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| Main Authors: | , , , |
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2017
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| 在線閱讀: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5335 |
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